A high-speed ITO-InAlAs-InGaAs Schottky-barrier photodetector

Wohlmuth, W.; Seo, Jai Woong; Fay, Patrick; Caneau, C.; Adesida, I.

doi:10.1109/68.623272

Cited by 42 publications

(18 citation statements)

References 12 publications

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“…Since the capacitance is the same for both devices, the difference in the response should originate from the total device resistance. ITO is known as transparent conductor, however when compared with Au, ITO is a weaker conductor with higher resistivity [15] [19]. This leads to a significantly higher series resistance in the device.…”

Section: Resultsmentioning

confidence: 99%

High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes

Bıyıklı

Kartaloğlu

Aytür

et al. 2003

MRS Internet j. nitride semicond. res.

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We have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/ Al 0.2 Ga 0.8 N Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.

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Section: Resultsmentioning

confidence: 99%

High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes

Bıyıklı

Kartaloğlu

Aytür

et al. 2003

MRS Internet j. nitride semicond. res.

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“…7 inset). Several sources contributed to the dark current, including the imperfect surface passivation [18] , diffusion current, generation recombination current, and tunneling current at high bias voltages [19] . The generation recombination current is mainly caused by the background dopant and the mismatch dislocations [20] .…”

Section: -2mentioning

confidence: 99%

Monolithically integrated dual-wavelength photodetector based on a step-shaped Fabry-Perot filter

et al. 2012

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A novel long wavelength photodetector with dual-wavelength spectral response is designed and fabricated using a step-shaped Fabry-Pérot (F-P) filter structure. The step-shaped GaAs/AlGaAs distributed Bragg reflectors and the InP PIN photodetector are grown on a GaAs substrate using low pressure metal organic chemical vapor deposition. High quality GaAs/InP heteroepitaxy is realized by employing a thin low temperature buffer layer. The photodetector structure is optimized by theoretical simulation. This device has a dual-peak distance of 19 nm (1 558 and 1 577 nm). The 3-dB bandwidth of 16 GHz is simultaneously obtained with peak quantum efficiencies of 8.5% and 8.6% around 1 558 and 1 577 nm, respectively. Dual-wavelength photodetectors in the 1.3-or 1.55-µm wavelength regions have significant potential in opticalfiber communication systems, especially for numerous microplate-based applications that aim to reduce optical interference caused by crosstalk, dispertion, or other impact factors of energy transmission and loss in optical transmission systems [1−5] . The operation of dualwavelength response has been demonstrated in several structures, including a taper substrate [6] , two stacks of quantum-well structures [7] , and two photodiodes [8] . However, the attractive approach of realizing a dualwavelength photodetector with step-shaped Fabry-Pérot (F-P) filter has yet to be reported.Furthermore, the distributed Bragg reflectors (DBR) in these F-P filters have been made from various materials, such as AlInGaAs/InAlAs [9] , InGaAsP/InP [10] , metamorphic GaAs/AlAs [11] , and dielectric mirrors [12] ; however, they all have the common problem of poor refractive index contrast. Among these candidates, GaAs/AlGaAs are the most promising DBRs because of their good electronic properties, reasonably low carrier recombination rates, and good refractive index contrast. However, for long wavelength (from 1.3 to 1.8 µm) photodetector fabrication, the PIN structure is preferred to be InP based. Several approaches on integrating GaAs/AlGaAs DBRs with the InP-based PIN photodetectors have been investigated, such as employing a thin, low temperature buffer layer [13] , fusing the InP-based active region with GaAs-based DBRs [14] , and growing metamorphic GaAs/AlGaAs DBRs on InP-based materials [15] ; these have been realized in tunable photodetectors [13] , resonant-cavity-enhanced photodetectors [16] , and vertical-cavity surface-emitting lasers [17] , respectively. In this letter, we propose a novel dual-wavelength photodetector realized by integrating a step-shaped GaAs based F-P filter with an InP-based PIN photodetector. High quality GaAs/InP heteroepitaxy is realized using a thin, low temperature buffer layer. We design and fabricate monolithically integrated step-shaped photodetectors that exhibit high spectrum and speed responses. Figure 1 shows the proposed bottom-injection type photodetector with step-shaped F-P filter. The incident light passes through the step-shaped filter into the PIN photodetector. The GaAs-b...

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“…Consequently, high potential barrier can be obtained indicating that the thin interfacial layer had modified the barrier height by influencing the space charge region of the semiconductor layer [4]. However, the responsivity of these devices is low as result of impedance mismatch between the air-metal semiconductor system and a significant portion of the incident optical radiation reflection [11]. Transparent low resistivity metals and thin interfacial layer could enhance the potential barrier height and the sensor responsivity.…”

Section: Introductionmentioning

confidence: 99%