W. Wohlmuth scite author profile

layer; and reduce the band discontinuity by changing the SEL material. CONCLUSIONThe measured frequency bandwidth of InGaAs OEMs with SELs is less than that of corresponding detectors. M eff decreases as LO frequency increases and increases as IF frequency increases. As optical power decreases, M eff also decreases. We present a circuit model of the OEM that explains the experimental results. ACKNOWLEDGMENTThe work in UF is supported by an ARO grant

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High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers

Wohlmuth

Fay

Vaccaro

et al. 1997

IEEE Photon. Technol. Lett.

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W. Wohlmuth

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High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers

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