Properties of R.F. magnetron sputtered cadmium–tin–oxide and indium–tin–oxide thin films

Wohlmuth, W.; Adesida, I.

doi:10.1016/j.tsf.2004.11.186

Cited by 82 publications

(32 citation statements)

References 52 publications

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“…The measured binding energies of Cd 3d 5/2 , Cd 3d 3/2 , Sn 3d 5/2 and Sn 3d 3/2 in the Cd 2 SnO 4 thin films are tabulated in Table 2. These values are well in agreement with the literature [22]. Quantitative XPS analysis was carried out by calculation of the area of Cd 3d 5 …”

Section: Resultssupporting

confidence: 89%

Thermal and optical properties of Cd2SnO4 thin films using photoacoustic spectroscopy

et al. 2009

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Cadmium stannate (Cd 2 SnO 4 ) thin films were prepared by the RF magnetron sputtering technique on glass substrates with substrate temperatures of room temperature (RT), 100°C, 200°C and 300°C. Photoacoustic analyses were made to obtain the thermal diffusivity and the optical bandgap values of the Cd 2 SnO 4 thin films. The change in thermal diffusivity of the films with the substrate temperature was analyzed. The optical bandgap values obtained from the photoacoustic spectroscopy were compared with the values obtained from the optical transmittance spectra. X-ray photoelectron spectroscopic (XPS) studies confirm the formation of stoichiometric films. Surface morphological studies by atomic force microscopy (AFM) revealed the crystalline nature of the films deposited at 100°C.

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Section: Resultssupporting

confidence: 89%

Thermal and optical properties of Cd2SnO4 thin films using photoacoustic spectroscopy

et al. 2009

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“…In 2 O 3 :Sn (also called indium tin oxide or ITO) is a well-known TCO. Asgrown ITO films are usually highly degenerate n-type semiconductors due to their large number of oxygen vacancies as well as substitution Sn dopants [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Structural and morphological properties of ITO thin films grown by magnetron sputtering

2015

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Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using fourpoint probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 9 10 -5 X cm.

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“…On the other hand, the carrier concentration decreases continuously with increase in substrate temperature. The decrease in carrier concentration with growth temperature may be caused by the annealing out of point defects and interstitial impurities [27]. It is seen that the electron mobility first increases with increase in growth temperature attaining maximum at 150 8C and then decreases with temperature.…”

Section: Electrical Characterizationmentioning

confidence: 95%

Highly conducting and transparent Ti-doped CdO films by pulsed laser deposition

Gupta

Ghosh

Patel

et al. 2009

Applied Surface Science

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Properties of R.F. magnetron sputtered cadmium–tin–oxide and indium–tin–oxide thin films

Cited by 82 publications

References 52 publications

Thermal and optical properties of Cd2SnO4 thin films using photoacoustic spectroscopy

Thermal and optical properties of Cd2SnO4 thin films using photoacoustic spectroscopy

Structural and morphological properties of ITO thin films grown by magnetron sputtering

Highly conducting and transparent Ti-doped CdO films by pulsed laser deposition

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