Modeling of InGaAs MSM photodetector for circuit-level simulation

Xiang, A.; Wohlmuth, W.; Fay, Patrick; Kang, Sung‐Mo; Adesida, I.

doi:10.1109/50.495150

Cited by 27 publications

(14 citation statements)

References 13 publications

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“…The knee in the IV curve has been reported in the literature [6,8,12,13] and is usually attributed to the complete depletion of the InGaAs absorption layer. The relationship of optical power to knee voltage is usually attributed to interface trap states or space charges [8,12,13].…”

Section: Discussionmentioning

confidence: 94%

“…The relationship of optical power to knee voltage is usually attributed to interface trap states or space charges [8,12,13]. The lack of a knee in the IV characteristics of InGaAs MSM-PDs without SELs, however, may indicate that the knee is related to the SEL.…”

Section: Discussionmentioning

confidence: 96%

“…When the bias voltage is above flat band, the electric field in each layer is almost uniform, except for small band bending at the location of the 2D gas. In region B, the generated photocurrent is given by [12]:where g is the interdigitated spacing, w is the finger width, R is the reflectivity, ␣ is the absorption coefficient, d is the InGaAs thickness, i is the intrinsic quantum efficiency, hv is the photon energy, and P is the incident optical power. Photo-generated electrons and holes move toward the anode and cathode, respec- tively.…”

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confidence: 99%

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Analysis of the mixing effect in InAlAs/InGaAs metal‐semiconductor‐metal photodetectors

Aliberti

Stann

Svensson

et al. 2003

Micro & Optical Tech Letters

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MHz is also obtained. The impedance bandwidth is 350 MHz (1710( -2060, covering the required bandwidths of the DCS and PCS bands. Figure 2(b) shows the measured return loss for three possible values of ␣ ϭ 15°, 25°, 35°. Relatively very small effects on the lower operating band are seen. On the other hand, the bandwidth of the upper operating band increases with an increase in ␣. The obtained results indicate that, for possible values of ␣ for the mobile phone in the talk condition, the proposed antenna is capable of covering the operating bandwidths of the GSM, DCS, and PCS bands.The radiation characteristics of the constructed prototype were also studied. Figures 3, 4, and 5 plot the measured radiation patterns at the center frequencies 925, 1795, and 1920 MHz, respectively, of the GSM, DCS, and PCS bands for the condition with ␣ ϭ 15°. The results for other conditions with ␣ ϭ 25°and 35°were also measured, and no special distinction in the measured radiation patterns was observed. In addition, other operating frequencies across the GSM, DCS, and PCS bands were also measured and showed similar patterns as plotted here. Measured antenna gain for the proposed antenna with ␣ ϭ 15°in the lower band for GSM operation and in the upper band for DCS/PCS operations is shown in Figure 6(a) and (b). The antenna gain obtained is about 0.8 -1.4 dBi across the GSM band, and that for the DCS/PCS bands is in a range of about 1.6 -2.6 dBi. CONCLUSIONA novel internal planar monopole antenna suitable for application in folder-type mobile phones for GSM/DCS/PCS operation has been proposed, and a constructed prototype have been studied. The proposed antenna is easy to implement and can be constructed at low cost. In addition to its compact structure (occupying a small area of 10 ϫ 40 mm 2 only), the proposed antenna shows good radiating characteristics for operating frequencies across the GSM, DCS, and PCS bands. InGaAs MSM-PDs would allow LADAR operation at eye-safe wavelengths, mainly 1.55 m. Unfortunately, the Schottky barrier height on InGaAs is quite low (ϳ0.1-0.2 eV) [5] leading to high dark current and, hence, low signal-to-noise ratio. To reduce dark current, various methods of "enhancing" the Schottky barrier have been used. The most commonly used method employs high-bandgap lattice-matched InP [6] or InAlAs [7,8] Schottky enhancement layers (SELs). Detectors using SELs yield low dark current, high responsivity, and high bandwidths.In this paper we analyze the optoelectronic mixing effect in an InAlAs Schottky-enhanced InGaAs MSM-PD. We find that the frequency bandwidth of such an OEM is less than that of a photodetector. We also show that the mixing efficiency depends on both the RF, LO, and IF frequencies and decreases nonlinearly with decrease in optical power. We attribute this behavior to the band-gap discontinuity associated with the SEL and present a circuit model of the OEM to explain the experimental results. EXPERIMENTThe MBE-grown InGaAs MSM-PD consists of a 500-Å InAlAs SEL, a 250-Å In(Ga,Al)As graded layer...

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Section: Discussionmentioning

confidence: 94%

Section: Discussionmentioning

confidence: 96%

mentioning

confidence: 99%

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Analysis of the mixing effect in InAlAs/InGaAs metal‐semiconductor‐metal photodetectors

Aliberti

Stann

Svensson

et al. 2003

Micro & Optical Tech Letters

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“…These are the accepted signs of the deleterious low-frequency gain often exhibited by MSM detectors. [3][4][5][6][7][8][9][10] This gain is believed to be due to long-lifetime trapping of photogenerated electrons or holes, field enhancement at the anode or cathode, and subsequent secondary injection of holes or electrons, respectively. Low optical power is sufficient to saturate the traps, so their contribution to photoresponse becomes negligible at higher powers.…”

Section: Resultsmentioning

confidence: 99%

“…8 It has been used as an AR coating on InAlAs/ InGaAs MSM photodetectors previously, 9 but few details of its passivating effects have been given. 5,10 More information is available 3 on the passivation of InP/InGaAs MSM detectors.…”

Section: Introductionmentioning

confidence: 99%

Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation

DeCorby

MacDonald

Beaudoin

et al. 1997

Journal of Elec Materi

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We report the reduction of low frequency gain and surface recombination in InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors, by surface passivation with plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride. A corresponding improvement in device speed, measured in the frequency-domain, is demonstrated. Large (100 µm) 2 devices exhibit neartransit-time-limited bandwidth (>10 GHz) following passivation, and device characteristics have been stable over a period of several months. We propose a physical model for electron trapping at the free surface, to explain the low frequency gain in nonpassivated devices and its subsequent elimination.

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Two-dimensional non-stationary numerical model for MSM structures

Radunović

Radunovic

1999

Int. J. Numer. Model.

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In this paper the solution of the non‐stationary model for MSM structures is obtained numerically. The two‐dimensional model consists of three singularly perturbed non‐linear partial differential equations. The alternating‐direction method for discretization in time and the non‐oscillatory streamline upwind method on a piecewise uniform grid for discretization in space are used to eliminate the interior and boundary layer oscillations. The described model is used for the analysis of the time response of a GaAs n‐type MSM structure to a Heaviside function form of the applied voltage. For the stationary case the I–V characteristic of the structure is determined. The numerical results confirm that the applied method is convenient for solving convection–diffusion problems. Copyright © 1999 John Wiley & Sons, Ltd.

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Modeling of InGaAs MSM photodetector for circuit-level simulation

Cited by 27 publications

References 13 publications

Analysis of the mixing effect in InAlAs/InGaAs metal‐semiconductor‐metal photodetectors

Analysis of the mixing effect in InAlAs/InGaAs metal‐semiconductor‐metal photodetectors

Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation

Two-dimensional non-stationary numerical model for MSM structures

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