InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights

Abstract

Articles you may be interested inModeling a backgated GaAs metal-semiconductor-metal photodetector

Homoepitaxial ZnSe MSM photodetectors with various transparent electrodes

“…3 shows simulated relation between dark current and electron barrier height for our homoepitaxial ZnSe MSM photodetectors bias at 15 V. With such a large bias, we can ensure the regions between electrodes were fully depleted. It was found that measured dark currents were larger than the theoretical minimum [7]. In other words, Eq.…”

Suppressing the dark current of metal–semiconductor–metal SiGe/Si heterojunction photodetector by using asymmetric structure

“…In this mode of operation, one of the electrodes is forward biased (anode) and the other is reverse biased (cathode). Moreover, both electron and hole barrier heights, Φ Bn and Φ Bp respectively, determine the dark current according to the equation [7] …”

“…Similar techniques were applied for InGaAs III-V and Si, Ge substrate MSM photodetectors as well [7,8]. The asymmetry MSM structure is implemented with different metals on anode and cathode as compared to the same metals on anode and cathode in conventional symmetry MSM one.…”

Schottky MSM junctions for carrier depletion in silicon photonic crystal microcavities

“…To reduce the dark current, we chose to work in the diffusion regime (V < V FB ) and to use a high contact barrier metal (Platinum). The typical dark current in our sample is around 10 nA at 20 V. To work in the full-depletion regime and still have a low dark current, we could use an asymmetrical junction [32,33] such as Platinum-Si-Chrome. The chrome potential barrier will strongly limit the hole current.…”