Homoepitaxial ZnSe MSM photodetectors with various transparent electrodes

Chang, Shoou–Jinn; Lin, Ting-Lan; Su, Yan–Kuin; Chiou, Yu−Zung; Wang, Chun-Kai; Chang, Chia Chin; Tang, Jing-Jou; Huang, Bor-Luen

doi:10.1016/j.mseb.2005.10.009

Cited by 20 publications

(5 citation statements)

References 11 publications

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“…The sensor mechanism is based on Equations (1) to (3) [ 35 , 36 ]; the reactions on the ZnO nanorod surface during UV illumination can be explained as follows: when the adsorbed oxygen molecules capture the electron from the conduction band, a negative space charge layer is created, which results in enhanced resistivity [ 37 ].…”

Section: Resultsmentioning

confidence: 99%

Selective growth of ZnO nanorods on microgap electrodes and their applications in UV sensors

et al. 2014

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Selective area growth of ZnO nanorods is accomplished on microgap electrodes (spacing of 6 μm) by using a facile wet chemical etching process. The growth of ZnO nanorods on a selected area of microgap electrode is carried out by hydrothermal synthesis forming nanorod bridge between two electrodes. This is an attractive, genuine, direct, and highly reproducible technique to grow nanowire/nanorod onto the electrodes on selected area. The ZnO nanorods were grown at 90°C on the pre-patterned electrode system without destroying the electrode surface structure interface and geometry. The ZnO nanorods were tested for their application in ultraviolet (UV) sensors. The photocurrent-to-dark (Iph/Id) ratio was 3.11. At an applied voltage of 5 V, the response and recovery time was 72 and 110 s, respectively, and the response reached 2 A/W. The deposited ZnO nanorods exhibited a UV photoresponse that is promising for future cost-effective and low-power electronic UV-sensing applications.

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Section: Resultsmentioning

confidence: 99%

Selective growth of ZnO nanorods on microgap electrodes and their applications in UV sensors

et al. 2014

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“…It can be concluded from the previously stated relations that the negative-charged oxygen ions adsorbed on the surface of ZnO can be discharged by photogenerated hole, which produce free electron in the conduction band [22]. The maximum numbers of oxygen molecules rapidly come out from the ZnO surface after ultraviolet illumination, which produce fast response to the ultraviolet light [23]. On the other hand when the ultraviolet light is turned OFF, the oxygen molecules reabsorb on the ZnO surface, returning the device to its initial value [24].…”

Section: Resultsmentioning

confidence: 93%

Area‐Selective ZnO Thin Film Deposition on Variable Microgap Electrodes and Their Impact on UV Sensing

Humayun

Kashif

Hashim

2013

Journal of Nanomaterials

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ZnO thin films were deposited on patterned gold electrodes using the sol-gel spin coating technique. Conventional photolithography process was used to obtain the variable microgaps of 30 and 43 μm in butterfly topology by using zero-gap chrome mask. The structural, morphological, and electrical properties of the deposited thin films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and Keithley SourceMeter, respectively. The current-voltage (I-V) characterization was performed to investigate the effect of UV light on the fabricated devices. The ZnO fabricated sensors showed a photo to dark current (Iph/Id) ratios of 6.26 for 30 μm and 5.28 for 43 μm gap electrodes spacing, respectively. Dynamic responses of both fabricated sensors were observed till 1V with good reproducibility. At the applied voltage of 1 V, the response time was observed to be 4.817 s and 3.704 s while the recovery time was observed to be 0.3738 s and 0.2891 s for 30 and 43 μm gaps, respectively. The signal detection at low operating voltages suggested that the fabricated sensors could be used for miniaturized devices with low power consumption.

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“…ZnSe, with a wide band gap of about 2.7 eV in the bulk material and much less toxicity than CdSe or CdS, has been identified as a promising blue-light-emitting material to replace ZnO. Based on the properties of a wide band gap and excellent luminescence efficiency, ZnSe has been widely used in transistors, lasers, solar cells, photodetectors, blue-light-emitting diodes, etc. In addition, unlike ZnO, ZnSe is also reported as a p- and n-type semiconductor, although it is still more difficult to realize an effective p-type than n-type ZnSe semiconductor .…”

Section: Introductionmentioning

confidence: 99%

Cadmium-Free Nanostructured Multilayer Thin Films with Bright Blue Photoluminescence and Excellent Stability

Luo

Wang

et al. 2021

ACS Omega

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Cadmium-based quantum dots (Cd-QDs) show decent performance for lighting applications due to good color saturation, an excellent high quantum yield, and a narrow full-width at half-maximum. However, the intrinsic toxicity of Cd is a major hindrance to related applications, especially in the biological field. ZnSe, with a band gap of 2.7 eV and lower toxicity than CdSe or CdS, is promising as a blue luminescent material. Herein, we mainly reported the preparation and luminescence properties of nanostructured ZnSe/ZnS multilayer thin films with bright blue photoluminescence. The photoluminescence spectrum contained two emission peaks, located at about 442 nm (near band-edge emission) and 550 nm (defect-related emission), respectively. More importantly, the photoluminescence performance and decay were explored in detail through low-temperature photoluminescence spectra. In addition, the nanostructured ZnSe/ZnS multilayer thin films showed favorable photostability.

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Homoepitaxial ZnSe MSM photodetectors with various transparent electrodes

Cited by 20 publications

References 11 publications

Selective growth of ZnO nanorods on microgap electrodes and their applications in UV sensors

Selective growth of ZnO nanorods on microgap electrodes and their applications in UV sensors

Area‐Selective ZnO Thin Film Deposition on Variable Microgap Electrodes and Their Impact on UV Sensing

Cadmium-Free Nanostructured Multilayer Thin Films with Bright Blue Photoluminescence and Excellent Stability

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