High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers

Wohlmuth, W.; Fay, Patrick; Vaccaro, K.; Martin, E.A.; Adesida, I.

doi:10.1109/68.588184

Cited by 18 publications

(9 citation statements)

References 7 publications

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“…Responsivity (external quantum efficiency) in a quantum-well device suffers from a small photo-absorption volume. Similar studies have shown that an increase in bandwidth for photodetectors with thin absorption layers is accompanied by a commensurate decrease in responsivity [19,20]. The responsivity calculated from the photocurrent in Figure 3 is only 5 ϫ 10 Ϫ4 A/W.…”

Section: Resultssupporting

confidence: 69%

Physical modeling of a novel barrier‐enhanced quantum‐well photodetector device for optical receivers

Tait

Nabet

2003

Micro & Optical Tech Letters

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circuit item that is 125 mm in length. The matching network is a three-item impedance convertor, working in the 15-30-MHz frequency. The reflection coefficient curves in complex plane ͉⌫͉ are obtained by the reflection coefficient modulus method described in this paper, and each circle ͉⌫͉ corresponds to one frequency point, with most of the values satisfying ͉⌫͉ Ͻ 0.5. CONCLUSIONIn practice, the modulus of ⌫ L is always known and the phase remains unknown. This paper has presented an in-depth study of the load-reflection coefficient modulus and its variety, as well as bandwidth inequality, and an example which achieves very good results has been given. REFERENCES

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Section: Resultssupporting

confidence: 69%

Physical modeling of a novel barrier‐enhanced quantum‐well photodetector device for optical receivers

Tait

Nabet

2003

Micro & Optical Tech Letters

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“…However, there will be some generation of carriers under the contact, where the electric field is weak, and this can deteriorate the response time of the device. For contact spacings of 1 µm, the bandwidth is limited by carrier transit time and is estimated to be approximately 15-20 GHz, as compared to literature examples [43].…”

Section: B Evanescently Coupled Detectormentioning

confidence: 80%

Thin-Film III–V Photodetectors Integrated on Silicon-on-Insulator Photonic ICs

Brouckaert

Roelkens

Thourhout

et al. 2007

J. Lightwave Technol.

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We critically assess recent progress in the integration of near-infrared photodetectors onto nanophotonic siliconon-insulator (SOI) waveguide circuits. Integration of thin-film InGaAs photodetectors is studied in detail. This method consists of bonding unprocessed III-V dies onto the SOI substrate using an intermediate adhesive layer. Both benzocyclobutene and spin-on glass are studied and compared as bonding agents. After the removal of the III-V substrate, the thin-film detectors are fabricated using wafer-scale-compatible processes and lithographically aligned to the underlying SOI waveguides. The process is compatible with the fabrication of InP/InGaAsP laser diodes on SOI. A new design of an evanescently coupled metal-semiconductormetal detector is proposed, proving the ability to obtain compact and highly efficient integrated InGaAs photodetectors.

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“…This transit time can be decreased by decreasing both SOI waveguide width and Schottky contact spacing. Using standard optical contact lithography, contact spacing of 1 m is easily obtainable resulting in an estimated transit time limited bandwidth of 15-20 GHz as compared to literature examples [7]. A heterogeneously integrated edge-coupled pin photodetector [8] also allows efficient and high-speed operation but the need of an inverted SOI taper makes this device large as compared with the MSM detector reported in this letter.…”

Section: A Device Structure and Designmentioning

confidence: 90%

Compact InAlAs–InGaAs Metal– Semiconductor– Metal Photodetectors Integrated on Silicon-on-Insulator Waveguides

Brouckaert

Roelkens

Thourhout

et al. 2007

IEEE Photon. Technol. Lett.

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We present measurement results of compact and efficient InAlAs-InGaAs metal-semiconductor-metal photodetectors integrated on silicon-on-insulator (SOI) waveguides. These thin-film devices are heterogeneously integrated on the SOI substrate by means of low-temperature die-to-wafer bonding using divinyldisiloxane benzocyclobutene (DVS-BCB). The responsivity of a 30-m-long detector is 1.0 A/W at a wavelength of 1550 nm and the dark current is 4.5 nA at a bias voltage of 5 V.

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High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers

Cited by 18 publications

References 7 publications

Physical modeling of a novel barrier‐enhanced quantum‐well photodetector device for optical receivers

Physical modeling of a novel barrier‐enhanced quantum‐well photodetector device for optical receivers

Thin-Film III–V Photodetectors Integrated on Silicon-on-Insulator Photonic ICs

Compact InAlAs–InGaAs Metal– Semiconductor– Metal Photodetectors Integrated on Silicon-on-Insulator Waveguides

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