A high-speed logic LSI using diffusion self-aligned enhancement depletion MOS IC

Ohta, Kuniichi; Morimoto, M.; Saitoh, Masumi; Fukuda, Takahiro; Morino, A.; Shimizu, K.; Hayashi, Yoshihiro; Tarui, Yasuo

doi:10.1109/jssc.1975.1050617

Cited by 18 publications

(5 citation statements)

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“…This is because the p-type trap layer is introduced by the interfacial charge (acceptorlike) at the GaN/Si heterojunction, resulting in the increase in the BV. When the concentrations of acceptor-like interface state charges increase from 1 × 10 11 cm −2 to 5 × 10 11 cm −2 , the BV of GaN/Si VDMOS increases from 2057 V to 2308 V, and the R on,sp increases from 17.7 mΩ•cm 2 to 118.2 mΩ•cm 2 for L D = 20 µm. On the other hand, an increase in the concentration of donor-like interface state charges results in a decrease in the internal electric field at the GaN/Si heterojunction.…”

Section: Resultsmentioning

confidence: 99%

“…This enhances the internal electric field at the GaN/Si interface and changes the distribution of the electric field, resulting in an increase in the BV and R on,sp . As the concentrations of acceptor-like interface state charges increase from 1 × 10 11 cm −2 to 5 × 10 11 cm −2 , the BV of GaN/Si VDMOS increases from 2057 V to 2308 V (shown in Figure 5a), the R on,sp increases from 17.7 mΩ•cm 2 to 118.2 mΩ•cm 2 for L D = 20 µm (shown in Figure 5b), while the V TH of GaN/Si VDMOS decreases from 4.65 V to 4.64 V (shown in Figure 5c). The increase in acceptor-like interface state charges reduces the internal electric field at the GaN/Si heterojunction.…”

Section: Resultsmentioning

confidence: 99%

“…A vertical double-diffused MOS (VDMOS) was proposed by H.W. Collins in 1979 [ 1 , 2 ]. However, there is a contradictory relationship between the BV and R on,sp of VDMOS, and R on,sp increases sharply with the increase in BV .…”

Section: Introductionmentioning

confidence: 99%

“…While breakdown still occurs in the Si material, the breakdown voltage of GaN/Si VDMOS achieved a significant improvement, surpassing that of traditional Si VDMOS. TCAD simulation results demonstrate that the BV of GaN/Si VDMOS is 2029 V, and the R on,sp is 17.2 mΩ•cm 2 , effectively breaking the constraint relationship between BV and R on,sp . Therefore, a promising avenue is opened up for the development of vertical devices for future power applications.…”

Section: Introductionmentioning

confidence: 99%

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GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance

2023

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A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp) by Breakdown Point Transfer (BPT), which transfers the breakdown point from the high-electric-field region to the low-electric-field region and improves the BV compared with conventional Si VDMOS. The results of the TCAD simulation show that the optimized BV of the proposed GaN/Si VDMOS increases from 374 V to 2029 V compared with the conventional Si VDMOS with the same drift region length of 20 μm, and the Ron,sp of 17.2 mΩ·cm2 is lower than 36.5 mΩ·cm2 for the conventional Si VDMOS. Due to the introduction of the GaN/Si heterojunction, the breakdown point is transferred by BPT from the higher-electric-field region with the largest radius of curvature to the low-electric-field region. The interfacial state effects of the GaN/Si are analyzed to guide the fabrication of the GaN/Si heterojunction MOSFETs.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance

2023

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“…A vertical double-diffusion metal oxide semiconductor (VDMOS) is an important component in the field of power semiconductor devices; due to its fast switching speed, low loss, high input impedance, low driving power, and excellent frequency characteristics, it has been widely used in power integrated circuits and power integrated systems [1][2][3][4][5][6][7][8][9][10]. However, the main problem of VDMOS power devices is that the specific on-resistance (R on,sp ) of the device increases sharply with an increase in breakdown voltage (BV), which greatly limits the development and application of VDMOS power devices [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Analysis of SiC/Si Heterojunction Band Energy and Interface State Characteristics for SiC/Si VDMOS

Yang,

Duan,

Yang

2023

Micromachines

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SiC/Si and GaN/Si heterojunction technology has been widely used in power semiconductor devices, and SiC/Si VDMOS and GaN/Si VDMOS were proposed in our previous paper. Based on existing research, breakdown point transfer technology (BPT) was used to optimize SiC/Si VDMOS. Simulation results showed that the BV of the SiC/Si heterojunction VDMOS was considerably increased from 259 V to 1144 V, and Ron,sp decreased from 18.2 mΩ·cm2 to 6.03 mΩ·cm2 compared with Si VDMOS. In order to analyze the characteristics of the SiC/Si heterojunction structure deeply, the influence of the interface state characteristics of the SiC/Si heterojunction on the electrical parameters of VDMOS was analyzed, including electric field characteristics, blocking characteristics, output characteristics, and transfer characteristics. In addition, the influence of the interface state of the SiC/Si heterojunction on energy band characteristics was analyzed. The results showed that with an increase in the interfacial charge (acceptor) concentration, the p-type trap layer was introduced into the interface of the SiC/Si heterojunction, energy increased slightly, and the barrier height difference at the heterojunction increased, resulting in an increase in BV. At the same time, since the barrier height became higher, electrons did not flow easily, so Ron,sp increased. On the contrary, when a charge (donor) was introduced at the interface of the SiC/Si heterojunction, the number of electrons in the channel increased, resulting in an increase in the electron current, which is conducive to the flow of electrons, resulting in a decrease in Ron,sp. The energy band and other characteristics of devices with temperature were simulated at different temperatures. Finally, the effects of SiC/Si heterojunction interface states on interface capacitances and switching performances of VDMOS devices were also discussed.

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A new short channel MOSFET structure (UMOST)

Salama

1977

Solid-State Electronics

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A high-speed logic LSI using diffusion self-aligned enhancement depletion MOS IC

Cited by 18 publications

References 4 publications

GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance

GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance

Analysis of SiC/Si Heterojunction Band Energy and Interface State Characteristics for SiC/Si VDMOS

A new short channel MOSFET structure (UMOST)

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