A high-speed, rotating-disc metalorganic chemical vapor deposition system for the growth of (Hg,Cd)Te and related alloys

Anderson, P.; Erbil, A.; Nelson, C.R.; Tompa, Gary S.; Moy, K.

doi:10.1016/0022-0248(94)90127-9

Cited by 8 publications

(6 citation statements)

References 21 publications

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“…From the results presented in this study, we may conclude that growing Cd 0.96 Zn 0.04 Te with Δ y = 0.001 cannot be accomplished in a horizontal flow reactor because of the thorough upstream mixing of DMCd with DEZn. On the other hand, Cd 0.96 Zn 0.04 Te has been successfully grown on GaAs/Si substrates at 523−553 K using a high-speed, rotating-disc reactor. − We suspect that in this reactor the DMCd and DEZn are fed through separate injection manifolds in the reactor headplate. This design, together with rapid mixing of the gases above the substrate, makes it possible to deposit alloy films of uniform composition over the entire substrate.…”

Section: Discussionmentioning

confidence: 99%

“…On the other hand, Cd 0.96 Zn 0.04 Te has been successfully grown on GaAs/Si substrates at 523-553 K using a high-speed, rotating-disc reactor. [28][29][30] We suspect that in this reactor the DMCd and DEZn are fed through separate injection manifolds in the reactor headplate. This design, together with rapid mixing of the gases above the substrate, makes it possible to deposit alloy films of uniform composition over the entire substrate.…”

Section: Discussionmentioning

confidence: 99%

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Effects of Ligand Exchange Reactions on the Composition of Cd₁_-_yZn_yTe Grown by Metalorganic Vapor-Phase Epitaxy

1997

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The metalorganic vapor-phase epitaxy (MOVPE) of cadmium zinc telluride (Cd1 - y Zn y Te) from dimethylcadmium (DMCd), dimethylzinc (DMZn), diethylzinc (DEZn), and diisopropyltelluride (DIPTe) was studied using on-line infrared spectroscopy to monitor the feed and effluent gases. The film composition was measured by X-ray diffraction. No zinc was incorporated into the film when DMCd and DMZn were used due to the very low reactivity of the latter compound. When DMCd and DEZn are tried, the films were nonuniform with Cd-rich films deposited at the reactor inlet and Zn-rich films deposited near the reactor outlet. This film profile was due to alkyl ligand exchange reactions between the group II precursors in the feed, producing DMZn, methylethylzinc (MEZn), methylethylcadmium (MECd), and diethylcadmium (DECd). The decomposition rates of these precursors vary over a wide range with DECd reacting at a 250 K lower temperature than DMZn. Since the organocadmium compounds were consumed at a much faster rate, CdTe was deposited first, while ZnTe was deposited downstream. The ligand exchange reactions explain why previous workers found it difficult to grow Cd1 - y Zn y Te alloys of uniform composition by MOVPE.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Effects of Ligand Exchange Reactions on the Composition of Cd₁_-_yZn_yTe Grown by Metalorganic Vapor-Phase Epitaxy

1997

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“…The annealing process makes it difficult to form heterostructure type devices. With the development of DIPTe or MATe, improved reactor design and improved flow dynamics many of these problems have been eliminated [22].…”

Section: Group Il-vi Materialsmentioning

confidence: 99%

Semiconducting Materials

Tompa¹

1996

CVD of Nonmetals

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“…From the governing differential equations, the dimensionless Peclet numbers for mass or heat transfer arise (see appendix A) P e mass = vL D P e heat = vL χ (10) with L as a characteristic dimension of the problem and χ as the temperature conductivity (χ = k/c p ρ). If the following conditions are met-a relatively slow flow velocity together with small distances resulting in small Peclet numbers-then the conditions…”

Section: The Transport Of Mass and Heat Is Essentially Determined By ...mentioning

confidence: 99%

“…The values for the temperature conductivity χ = k/c p ρ of H 2 are one order of magnitude higher than the mass diffusion coefficients. Low Peclet numbers are more easily achievable for heat than for mass transport (see equation (10)).…”

Section: Diffusion Coefficientsmentioning

confidence: 99%

A new hydrodynamic principle for CVD reactors: the boundary condition control

Kühn¹

1996

Semicond. Sci. Technol.

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A new hydrodynamic principle for CVD reactors is presented which allows the homogeneous deposition of layers on a static susceptor, without any size limitation. This new principle is based on the precise control of both the temperature and concentration fields, to render them laterally homogeneous above the susceptor.Two measures are necessary to achieve these homogeneous conditions. First, the influence of the forced convection of the carrier gas on the temperature and concentration fields has to be diminished. As such, diffusion dominates the transport of heat and mass. Second, these two fields must be determined by constant boundary conditions at the susceptor and at the opposite wall.A variety of reactor geometries and parameters were studied by analytical and numerical simulations. For a relatively simple reactor model, a growth rate homogeneity better than 0.2% over 90 mm is achievable. Chemical efficiencies of up to 70% are also attainable.

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A high-speed, rotating-disc metalorganic chemical vapor deposition system for the growth of (Hg,Cd)Te and related alloys

Cited by 8 publications

References 21 publications

Effects of Ligand Exchange Reactions on the Composition of Cd₁_-_yZn_yTe Grown by Metalorganic Vapor-Phase Epitaxy

Effects of Ligand Exchange Reactions on the Composition of Cd₁_-_yZn_yTe Grown by Metalorganic Vapor-Phase Epitaxy

Semiconducting Materials

A new hydrodynamic principle for CVD reactors: the boundary condition control

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A high-speed, rotating-disc metalorganic chemical vapor deposition system for the growth of (Hg,Cd)Te and related alloys

Cited by 8 publications

References 21 publications

Effects of Ligand Exchange Reactions on the Composition of Cd1-yZnyTe Grown by Metalorganic Vapor-Phase Epitaxy

Effects of Ligand Exchange Reactions on the Composition of Cd1-yZnyTe Grown by Metalorganic Vapor-Phase Epitaxy

Semiconducting Materials

A new hydrodynamic principle for CVD reactors: the boundary condition control

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Effects of Ligand Exchange Reactions on the Composition of Cd₁_-_yZn_yTe Grown by Metalorganic Vapor-Phase Epitaxy

Effects of Ligand Exchange Reactions on the Composition of Cd₁_-_yZn_yTe Grown by Metalorganic Vapor-Phase Epitaxy