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and ZnTe substrates at35o'C with atmospheric pressure MOVPE. DiisoproWItelluride, dimethylzinc-triethylamine and diethylzinc were chosen as metallorganic precursors. The samples were characterized by photoluminescence at 2 K and the Hall effect. In the R spectra the light hole, heavy hole and bound exciton transitions are well resolved. Most of the transitions have been assigned. The partial pressure ratios of the alkyls were optimized. The influence of composition and stoichiometry of the substrates on the purity of the ZnTe is revealed. Various alkyls as sources of As, Bi, Ga. In and I were investigated for their suitability as p-or n-type dopants. It is shown that telraethylbiarsine and ethyliodide are promising alkyls for p-and n-type doping of ZnTe. Zinc telluride layers have been grown on (100) GaAs, GaSb I 54 671 @U Bumn 49 452 (in Japanese) Len. 14 151 Stare Commwa 2 157 Saminadayar K 1985J. Cyst. Gmwth 7.2 194 E p z q (London: Acadimic) " d e l R.

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