The metal organic vapour phase epitaxy of ZnTe: II. Analysis of growth conditions

Reaction Chemistry of ZnTe Metalorganic Vapor-Phase Epitaxy

“…The kinetics presented in Table 2 are consistent with the heterogeneous decomposition of the two sources. 3,7,10 The apparent activation energies and the orders in the reactant pressures can be explained by a Langmuir-Hinshelwood mechanism in which a surface reaction is the rate-limiting step. The near zero-order dependence on the DMZn and DEZn pressures suggests that the coverage of these species are relatively high under MOVPE conditions.…”

“…This value for E act is consistent with previously reported values for ZnTe MOVPE. 3,7 The frequency factor is 1.9 × 10 7 s -1 , as determined from the intercept of the line. The figure also reveals that at a II/VI ratio of 1.2 the DIPTe is consumed in excess of the DMZn throughout the temperature range studied.…”

“…Outside the heated region, the glass tube was rapidly quenched to 300 K with watercooled, heat exchangers. Electronic-grade DMZn, DEZn, and DIPTe were contained in 200 cm 3 stainless steel bubblers immersed in thermal regulating baths at 258, 288, and 306 K, respectively. The precursors were vaporized into 0.5-30 cm 3 min -1 of helium, then diluted with either hydrogen or helium to between 300 and 600 cm 3 min -1 , and fed to the reactor.…”

“…This apparent activation energy is slightly higher than that previously reported. 3,7 In contrast to growth with DMZn, the DEZn is consumed in excess of the DIPTe at a II/VI ratio of 1.2. The amount of excess DEZn consumed increases with temperature, ranging from 0.5 × 10 -7 mol min -1 at 625 K to 9.2 × 10 -7 mol min -1 at 700 K.…”

“…[1][2][3][4][5][6][7] Metalorganic vapor-phase epitaxy (MOVPE) is an attractive technology for large-scale production of these devices. 1,5,[7][8][9][10][11] However, the MOVPE of ZnTe is not completely understood at this time.…”