The MOVPE growth and doping of ZnTe

Abstract

and ZnTe substrates at35o'C with atmospheric pressure MOVPE. DiisoproWItelluride, dimethylzinc-triethylamine and diethylzinc were chosen as metallorganic precursors. The samples were characterized by photoluminescence at 2 K and the Hall effect. In the R spectra the light hole, heavy hole and bound exciton transitions are well resolved. Most of the transitions have been assigned. The partial pressure ratios of the alkyls were optimized. The influence of composition and stoichiometry of the substrates on the purity of the ZnTe is revealed. Various alkyls as sources of As, Bi, Ga. In and I were investigated for their suitability as p-or n-type dopants. It is shown that telraethylbiarsine and ethyliodide are promising alkyls for p-and n-type doping of ZnTe. Zinc telluride layers have been grown on (100) GaAs, GaSb I 54 671 @U Bumn 49 452 (in Japanese) Len. 14 151 Stare Commwa 2 157 Saminadayar K 1985J. Cyst. Gmwth 7.2 194 E p z q (London: Acadimic) " d e l R.

Growth and characterisation of n- and p-type ZnTe thin films for applications in electronic devices

“…Several techniques have been used for the deposition of ZnTe thin films. Some of these methods are: closed space sublimation (CSS) [16], hydrothermal [17], molecular beam epitaxy [11], rf-magnetron sputtering [18], metallo-organic chemical vapour deposition 3 (MOCVD) [19], metallo-organic vapour phase epitaxy (MOVPE) [20], thermal evaporation [21] and electrodeposition [22][23][24][25]. According to Mahalingam et al [24], electrodeposition (ED) technique provides a suitable method to prepare continuous and thin semiconductor films.…”

Growth of phosphorus‐doped ZnTe layers by metalorganicvapour phase epitaxy using tris‐dimethylaminophosphorus

“…This material is promising for applications as a variety of optoelectronic devices such as pure green light emitting diodes, THz detectors, solar cells, wave-guides and modulators. For metalorganic vapour phase epitaxy (MOVPE), which is a promising growth technique for mass production, several efforts have been made to attain conductive p-type ZnTe using trimethylantimonide [1], tertiarybutylamine [2,3], trimethylbismuth [2], tetraethylbiarsine [4], trimethylarsine [5], triethylarsine [6] and tertiary-butylphosphine [2,3].…”

A kinetic model for the growth of znte by metal organic chemical vapour deposition

“…The surface coverages (@), calculated with P, = atm for all species by putting the K, values into Eqns [4], are reported in Table 2. The surface appears to be mainly covered by Zn species (8zn=0.85 and 8.re=0.02 in the DEZn + DETe system): a Zn poisoning effect on the surface is then found which could explain the V decreasing for 9 t < 1.…”