Luminescence caused by extended lattice defects in epitaxially grown ZnTe layers

Wolf, K.; Naumov, A.; Reisinger, T.; Kastner, M.; Stanzl, H.; Kühn, W.; Gebhardt, W.

doi:10.1016/0022-0248(94)90731-5

Cited by 28 publications

(15 citation statements)

References 22 publications

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“…PL emission spectra of 320 nm thick ZnTe film. emission processes dominated by a 'DAP' band and located within the reported 2.10-2.27 eV energy interval, which may be ascribed to a recombination involving a shallow donor and an acceptor complex [30,31]. These PL observations confirm that ZnTe films with nano grains deposited here are of high purity and can be used for developing luminescence devices.…”

Section: Thickness (Nm)supporting

confidence: 81%

Effect of thickness on the microstructural, optoelectronic and morphological properties of electron beam evaporated ZnTe films

Balu

Nagarethinam

Thayumanavan

et al. 2010

Journal of Alloys and Compounds

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Section: Thickness (Nm)supporting

confidence: 81%

Effect of thickness on the microstructural, optoelectronic and morphological properties of electron beam evaporated ZnTe films

Balu

Nagarethinam

Thayumanavan

et al. 2010

Journal of Alloys and Compounds

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“…But a peak at 573 nm is observed which is the Y 2 peak reported at 576 nm related to the structural defects in epitaxial layer [14]. However, a peak at 562 nm is observed (567 nm reported) which usually appears when there is no Cu impurity found in the material.…”

Section: Resultsmentioning

confidence: 83%

Photoluminescence properties of ZnSe1−x Te x thin films on GaAs/ITO substrates by electron beam evaporation technique

Suthagar

Kissinger

Balasubramaniam³

et al. 2010

Sci. China Technol. Sci.

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Zinc chalcogenide which includes zinc selenide, zinc sulphide, zinc telluride and mixed crystals of these shows a great potential as an optoelectronic device material. Zinc selenotelluride is a suitable material for visible light emitting devices which are expected to cover the spectral range from yellow to blue. In our present study the composition controlled ZnSe 1-x Te x films with different Te content x = 0, 0.2, 0.4, 0.6, 0.8 and 1.0 were deposited by electron beam (EB) evaporation technique. GaAs films were deposited by vacuum evaporation route on indium tin oxide (ITO) substrates which were used as base for depositing the ZnSe 1-x Te x film. The band-gap energy change in the entire composition range was determined at room temperature by photoluminescence (PL) spectroscopy. The peak observed at about 2.56 eV shows the effect of solid solution formation between ZnSe and ZnTe which modifies the lattice and consequently the band edge emission characteristics. The heterostructures showed three peaks in the visible region of white light spectrum. semiconducting II-VI materials, ZnSeTe, electron beam evaporation, photoluminescence Citation: Suthagar J, Suthan kissinger N J, Balasubramaniam M, et al. Photoluminescence properties of ZnSe 1-x Te x thin films on GaAs/ITO substrates by electron beam evaporation technique.

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“…Just in the case of the cubic microcrystals (red line in Figure a), a band centered at 2.15 eV is present. This could be related to the dislocations band, in particular to the so‐called Y band . Due to reduced size of the elongated structures, a minor role of dislocations could be expected and the emission related these defects is absent.…”

Section: Resultsmentioning

confidence: 99%

Growth by Vapor‐Solid Method and Luminescence Characterization of Zn‐Chalcogenides Micro‐ and Nanostructures

Sotillo

Urbieta

Fernández

2018

Physica Status Solidi (a)

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In this work, ZnSe and ZnTe micro‐ and nanostructures are grown by the vapor‐solid method. Thermal treatments are performed in an inert atmosphere (Ar) to avoid the oxidation of the samples, at 900 °C for 24 h. The structures obtained are investigated by SEM and HRTEM to assess morphology and microstructure. The optical properties are investigated by cathodoluminenscence technique. The bandgaps of these compounds are 2.8 eV for ZnSe and 2.4 eV for ZnTe, however, the luminescence study is extended toward red and near infrared regions to investigate the defect levels. The influence of the size and morphology of the structures on the luminescence properties are studied.

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Luminescence caused by extended lattice defects in epitaxially grown ZnTe layers

Cited by 28 publications

References 22 publications

Effect of thickness on the microstructural, optoelectronic and morphological properties of electron beam evaporated ZnTe films

Effect of thickness on the microstructural, optoelectronic and morphological properties of electron beam evaporated ZnTe films

Photoluminescence properties of ZnSe1−x Te x thin films on GaAs/ITO substrates by electron beam evaporation technique

Growth by Vapor‐Solid Method and Luminescence Characterization of Zn‐Chalcogenides Micro‐ and Nanostructures

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