A high stability and uniformity W micro hot plate

Castagna, Maria Eloisa; Modica, R.; Cascino, Salvatore; Moschetti, Maurizio; Cerantonio, Viviana; Messina, Alberto; Santangelo, A.

doi:10.1016/j.sna.2018.06.046

Cited by 11 publications

(4 citation statements)

References 7 publications

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“…The resistance drift increased to over 2.5% after operating at 500 °C for 825 min. Annealing at high temperatures may improve the thermal stability of W heater 8,9 . But the upper limit of the annealing temperature for CMOS chips is 525 °C within 90 min according to previous research 10 .…”

Section: Stabilitymentioning

confidence: 99%

Fabrication and performance of a novel CMOS infrared emitter

Wang

et al. 2022

International Symposium on Silicon-Based Optoelectronics (ISSBO 2022)

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Si-based thermal infrared emitter is one of the key components of the micro NDIR gas sensor. In this paper, a low power, low-cost, and radiation enhanced thermal infrared emitter was developed and fabricated based on a commercial standard CMOS technology. A CuO-MnO2 film with porous structures was deposited on the center of the freestanding membrane of the device by electrohydrodynamic inkjet printing to enhance the infrared emission. The CMOS infrared emitter takes only about 150 mW to reach 500 ℃. The modulation depth is larger than 90% at 10 Hz and about 50% at 50 Hz. Both the emission spectrums and the infrared radiation power results confirmed that the printed radiation enhance layer significantly improved the radiation intensity of the device in a mid-infrared wavelength of 2.5-8 μm. The stability of the devices was tested by studying the resistance drifts of the emitters after operation for a period of time. The emitter shows excellent stability at 450 ℃ and below. The resistance drift of the emitter operating at 500 ℃ was reduced to about half of the unannealed devices by electrothermal annealing at 650 ℃ for 10 min. The CMOS infrared emitter can be easily integrated with CMOS interface circuits in the future to achieve highly integrated smart sensor.

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Section: Stabilitymentioning

confidence: 99%

Fabrication and performance of a novel CMOS infrared emitter

Wang

et al. 2022

International Symposium on Silicon-Based Optoelectronics (ISSBO 2022)

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“…Doped polysilicon has also been widely used for the fabrication of IR thermal emitters due to it being fully CMOS compatible and has good adhesion to other materials. However, polysilicon displays poor long term stability at temperatures above 300°C [15], [16]. The use of tungsten enables the design and fabrication of an IR thermal source with longterm stability, having all the advantages of CMOS technology.…”

Section: Ir Source Design and Fabricationmentioning

confidence: 99%

High temperature characterization of a CMOS based infra-red source using thermal-incandescence microscopy

Pandey

Oxley

Hopper

et al. 2020

Solid-State Electronics

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This paper presents the high temperature thermal characterization of a Micro-Electro-Mechanical Systems (MEMS) infra-red (IR) thermal source, using non-contact optical approaches, based on IR and thermo-incandescence microscopy. The IR thermal source was fabricated using a CMOS based processing technology and consists of a miniature micro-heater, fabricated using tungsten metallization. The performance and reliability of the IR source is highly dependent on its operating temperature. For short-wave (1.4 µm -2.5 µm) infra-red emission, the operating temperature is in excess of 800°C. Work will be presented in this paper in which spot temperature measurements (> 700 °C) were made on the IR source using thermal-incandescence microscopy. Thermal-optical calibration was achieved by utilizing the known melting point (MP) of different metal microparticles. Optical measurements were compared to those obtained using an electrical approach. The thermal measurements suggest good temperature uniformity across the micro-heater of the IR source.

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“…Typically, the size of a MHP with suspended is below 0.5 mm in diameter. A temperature difference of 30-50 °C from edge to the center, when the MHP temperature is between 300 -400 °C, is generated [8][9][10]. For a sintering process study under TRXRD, a 0.5 mm diameter heating area hardly provides enough signal for detection.…”

Section: Introductionmentioning

confidence: 99%

MEMS Enabled Fast Time-Resolved X-Ray Diffraction Characterization Platform for Copper Nanoparticle Sintering in Heterogeneous Integration Applications

Zhang

Wei

Böttger

et al. 2019

2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems &Amp; Eurosensors XXXIII (TRANSDUCERS &Am

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We report the design, fabrication and experimental investigation of a MEMS micro-hotplate (MHP) for fast time-resolved X-ray diffraction (TRXRD) study of Cu nanoparticle paste (nanoCu paste) sintering process. The device and its system are designed to have a 60 ms minimum time interval, uniform temperature distribution and variant gas environments. A TRXRD study of nanoCu paste sintering at 200 °C in H2-N2 gas mixture was done using this device. With 1 sec interval, Cu8O reduction and Cu crystallization in sintering is observed. Results can be combined with other studies to optimize material design and process development.

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A high stability and uniformity W micro hot plate

Cited by 11 publications

References 7 publications

Fabrication and performance of a novel CMOS infrared emitter

Fabrication and performance of a novel CMOS infrared emitter

High temperature characterization of a CMOS based infra-red source using thermal-incandescence microscopy

MEMS Enabled Fast Time-Resolved X-Ray Diffraction Characterization Platform for Copper Nanoparticle Sintering in Heterogeneous Integration Applications

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