A High Voltage Driving Chiplet in Standard 0.18-<i>μ</i>m CMOS for Micro-Pixelated LED Displays Integrated With LTPS TFTs

Lee, Hsu-Chi; Lu, Yun-Chih; Lin, Yu‐Chen; Lai, Wei-Lin; Hsieh, Hsiang-Yuan; Jaw, Boy-Yiing; Chuang, Chin-Tang; Chen, Yung-Chih; Chen, Yi-Jan Emery

doi:10.1109/tcsvt.2022.3168051

Cited by 2 publications

(1 citation statement)

References 25 publications

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“…They used a PMOS driver with a pixel size of 150 μm × 150 μm and a resolution of 64 × 64 to drive gan-based micro-LEDs with a diameter of 25 μm [21]. However, up to now, there is no research on directly driving a micro-LED with a CMOS inverter [22][23][24][25][26]. Therefore, the circuit design of Micro-LEDs driven by CMOS inverters is proposed for the first time in this paper.…”

Section: Introductionmentioning

confidence: 99%

Research on Simulation Design of MOS Driver for Micro-LED

2022

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Micro-LED is a new technology applied in the display field, which has the advantages of self-illumination, low power consumption, high brightness, long life and ultra-high resolution, and has broad application prospects. Using MOS devices to drive micro-LED can enable each unit to have its own drive, thus improving the yield and reducing the subsequent repair processes. In this paper, Sentaurus TCAD simulation software is used to design and simulate NMOS/PMOS devices and their driving circuits. For the first time, CMOS inverters are used to directly drive Micro-LED. Three kinds of driving circuits are compared and analyzed according to their simulation results in output characteristics and transient characteristics. In terms of switching characteristics caused by output characteristics, a CMOS inverter driving a micro-LED circuit has no problems of incomplete turn-off and has greater advantages. In the switching characteristics aspect caused by transient characteristics, PMOS driving a micro-LED circuit has the shortest turn-on time and greater advantages. When compared with a micro-LED driven by an access current-limiting resistor, a micro-LED driven by a direct drive has a smaller on-time value and greater advantages.

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Section: Introductionmentioning

confidence: 99%

Research on Simulation Design of MOS Driver for Micro-LED

2022

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Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Yan,

Wang,

Yan

et al. 2023

Adv Funct Materials

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High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become increasingly necessary to meet the emerging demands such as healthcare, edge computing, and the Internet of Things, etc. This article aims to point out the potential development trends and bottlenecks of TFT ICs, enhancing their performance in terms of electronic performance, stability, consistency, CMOS design, and manufacturing capability. Basic device structures and overall metrics of TFT ICs are explored, as well as their superiority compared to silicon‐based ultrathin chips. Hydrogenated amorphous silicon, low‐temperature polycrystalline silicon, and amorphous oxide semiconductors are widely used in displays due to their ability to be deposited on large areas at low processing temperatures and low cost, and are validated in many prototypes for TFT ICs. Their conduction mechanisms, process flows, performance evaluation, and recent advances are comprehensively viewed. In addition, the potential of emerging low‐dimensional materials as next‐generation channel materials is discussed, along with their limitations and progress in this field. Finally, the major challenges in manufacturing high‐performance TFT ICs and future perspectives are summarized.

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A High Voltage Driving Chiplet in Standard 0.18-μm CMOS for Micro-Pixelated LED Displays Integrated With LTPS TFTs

Cited by 2 publications

References 25 publications

Research on Simulation Design of MOS Driver for Micro-LED

Research on Simulation Design of MOS Driver for Micro-LED

Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

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