A highly efficient class-EF2 power amplifier in GaAs pHEMT technology

Dehqan, A. R.; Toofan, Siroos; Medi, Ali

doi:10.1007/s10470-017-1038-8

Cited by 3 publications

(2 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The power amplifier (PA) strongly affects the performance of the transmitter [1][2][3], and thus it should operate as efficiently as possible over wide bandwidths, maintaining a sufficient level of linearity, which is especially challenging for 5G systems, based on Orthogonal Frequency Division Modulation (OFDM). OFDM signals have a varying envelope and high PAPR of the order of 10 dB to 12 dB for aggregated multicarrier signals [4], thus making the design of a PA that operates efficiently over wide dynamic and frequency ranges a critical challenge [5][6][7][8][9]. Crest Factor Reduction or Selected Mapping techniques [10,11] are normally adopted to reduce the PAPR of these signals to the 6 dB to 8 dB range, hence mitigating the negative effects of very high PAPR on the PA efficiency.…”

Section: Introductionmentioning

confidence: 99%

Broadband Class-J GaN Doherty Power Amplifier

et al. 2022

Self Cite

View full text Add to dashboard Cite

This paper presents a broadband 3 GHz–3.7 GHz class-J Doherty power amplifier exploiting second harmonic tuning in the output network. Furthermore, the output impedance inverter is eliminated and its effect is embedded in the main device’s output matching network, thus trading off among bandwidth, efficiency, and gain. The proposed amplifier adopts two 10 W packaged GaN transistors, and it achieves in measurement 60–74%, and 46–50% drain efficiency at saturation and 6 dB output back-off, respectively, with a saturated output power of 43 dBm–44.2 dBm and a small-signal gain of 10 dB–13 dB. The proposed DPA exhibits a simulated adjacent channel power ratio less than −30 dBc at 36 dBm average output power, when a 16-QAM modulation with 5 MHz bandwidth is applied to the 3.5 GHz carrier.

show abstract

Section: Introductionmentioning

confidence: 99%

Broadband Class-J GaN Doherty Power Amplifier

et al. 2022

Self Cite

View full text Add to dashboard Cite

show abstract

“…Independent of the specific scenario (base-station, handset, point-to-point radio-links), the power amplifier is one of the most consuming elements of the entire architecture, and it is of paramount importance for it to achieve the highest possible efficiency. This holds true for 5G systems, where PAs are required to provide high efficiency, gain, linearity, and output power in increasingly wider bandwidths [4][5][6][7]. The frequency bands for 5G mobile networks are organized into two different ranges, namely FR1 covering the sub-6 GHz bands, some of which were already used by previous standards, and FR2 covering the millimeter wave range, from 24.25 GHz to 52.6 GHz.…”

Section: Introductionmentioning

confidence: 99%

Design of a Wideband Doherty Power Amplifier with High Efficiency for 5G Application

et al. 2021

Self Cite

View full text Add to dashboard Cite

This paper discusses the design of a wideband class AB-C Doherty power amplifier suitable for 5G applications. Theoretical analysis of the output matching network is presented, focusing on the impact of the non-ideally infinite output impedance of the auxiliary amplifier in back off, due to the device’s parasitic elements. By properly accounting for this effect, the designed output matching network was able to follow the desired impedance trajectories across the 2.8 GHz to 3.6 GHz range (fractional bandwidth = 25%), with a good trade-off between efficiency and bandwidth. The Doherty power amplifier was designed with two 10 W packaged GaN HEMTs. The measurement results showed that it provided 43 dBm to 44.2 dBm saturated output power and 8 dB to 13.5 dB linear power gain over the entire band. The achieved drain efficiency was between 62% and 76.5% at saturation and between 44% and 56% at 6 dB of output power back-off.

show abstract