A highly efficient quantum dot light emitting diode via improving the carrier balance by modulating the hole transport

Pan, Jiangyong; Chen, Jing; Huang, Qianqian; Wang, Lixi; Lei, Wei

doi:10.1039/c7ra08302e

Cited by 73 publications

(37 citation statements)

References 41 publications

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“…The optical band gap of Cu 2 SnS 3 ‐Ga 2 O 3 as shown in Figure g is used for energy band diagram of the QLEDs with the different HILs as shown in Figure j. The energy levels of PVK and LZO are collected from the literatures …”

Section: Resultsmentioning

confidence: 99%

High Hall Mobility P‐type Cu₂SnS₃‐Ga₂O₃ with a High Work Function

Kim

Cho

et al. 2018

Adv Funct Materials

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A new transparent p-type oxide semiconductor (POS) is reported, Cu 2 SnS 3 -Ga 2 O 3 , having high Hall mobility of 36.22 cm 2 V −1 s −1 , and high work function of 5.17 eV. The existence of Cu 2 SnS 3 and Ga 2 O 3 phases in the film is confirmed by X-ray photoelectron spectroscopy results and the Cu 2 SnS 3 shows polycrystalline structure according to Raman spectrum and X-ray diffraction analysis. The transparent Cu 2 SnS 3 -Ga 2 O 3 exhibits the carrier concentration of 5.86 × 10 16 cm −3 , and electrical resistivity of 1.94 Ω·cm. The transparent POS is applied to green quantum light-emitting diodes (QLEDs) as a hole injection layer (HIL) because of its high work function. The QLED exhibits the maximum current efficiency of 51.72 cd A −1 , power efficiency of 31.97 lm W −1 , and external quantum efficiency (EQE) of 14.93%, which are much higher than the QLED using polyethylene dioxythophene:poly(styrenesulfonate) HIL exhibiting current efficiency of 42.66 cd A −1 , power efficiency of 20.33 lm W −1 , and EQE of 12.36%. The Cu 2 SnS 3 -Ga 2 O 3 developed in this work can be widely used as a transparent and conductive p-type oxide for thin-film devices.

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Section: Resultsmentioning

confidence: 99%

High Hall Mobility P‐type Cu₂SnS₃‐Ga₂O₃ with a High Work Function

Kim

Cho

et al. 2018

Adv Funct Materials

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“…Figure 3e represents PL quenching of perovskite films based on different HTLs. The P9VK‐based perovskite devices expressed the lowest quenching ability, possibly due to its lower charge carrier mobility (2.5 × 10 −6 cm 2 V −1 s −1 ) [ 35 ] as well as bad interface contact that restricted the hole transport across the interface, which led to the lower J SC , V OC , and FF. [ 36 ] However, PEDOT:PSS‐based devices expressed the highest PL quenching.…”

Section: Resultsmentioning

confidence: 99%

Elucidating the Roles of Hole Transport Layers in p‐i‐n Perovskite Solar Cells

Ali

Gao

Zhou

et al. 2020

Adv Elect Materials

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The hole‐transport layer (HTL) is critical to high performance of perovskite solar cells (PSCs) in terms of hole extraction, transportation, and mediation of the following film formation. Here, the interplay between HTLs and open‐circuit voltage (VOC) in PSCs is directly targeted. The results suggest that there is no evident relation between the obtained VOC and the work function of HTLs and it is directly controlled by the recombination losses inside the perovskite material (grain boundaries and trap states) as well as at the interfacial contacts. Additionally, an insight understanding about the charge transfer behavior in PSCs is provided and it is pointed out that the nature of interfacial contacts is a critical factor in defining charge accumulation and recombination at the interfaces. Analysis of the electroluminescence efficiency and transient absorption spectroscopy confirms the better interfacial contact of HTL/perovskite, and larger grain size of perovskite films mediated by the hydrophobic nature of HTLs can collectively and efficiently eliminate nonradiative recombination, resulting in faster charge transfer and lower resistance at the interfaces. This work provides a profound understanding of how the surface hydrophobicity and the interface contact are correlated in terms of nonradiative losses and J–V characters in real devices.

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“…Fluorescence prevails at room temperature in PL spectrum of PVK, however, in the EL spectrum, phosphorescence is also often observed as triplet exciton are formed . The origin of the small emission peak at 601 nm (Figure a) in the EL spectrum is still controversial and has been assigned to electromer formation, triplet excimer, electroplex . On the other hand, EL from the hybrid system (Fig.4b) does display similarities with the PL spectrum from AZO, where bands are found in blue, green and red regions.…”

Section: Figurementioning

confidence: 93%

“…Main strategies in the literature include insertion of n transport layer, p‐n junction, molecular n and p doping, use of p‐i‐n structure with high conductivity . Additionally, oxadiazole based electron dopants have been used to improve the electron transport in PVK with exciplex/electroplex formation and significant contribution to luminance, while PVK doped with 1‐bis[4‐[N,N‐di(4‐tolyl)amino]phenyl]‐cyclohexane (TAPC) presented enhanced hole mobility …”

Section: Figurementioning

confidence: 99%

White Electroluminescence from Aluminum Zinc Oxide Embedded in Poly(9‐vinylcarbazole)

et al. 2019

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Simple methods for manufacturing white light‐emitting diodes (WLEDs) based on ZnO are still challenging researchers. Solution processed WLEDs based on Al doped ZnO (AZO) nanoparticles embedded in PVK (hybrid system) are demonstrated here, and PL studies of the hybrid system suggest that defects in AZO and PVK/AZO interface are likely to be the origin of white EL. Besides electrical conductivity increment, AZO provided the emissive layer with a more balanced charge injection; thus, the threshold voltage reduced from 8.1 V to 7.5 V and EL enhanced from 4.47 cd/m2 to 18.69 cd/m2 at 10 V, for the pure PVK compared to the hybrid system, respectively.

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A highly efficient quantum dot light emitting diode via improving the carrier balance by modulating the hole transport

Abstract: A highly efficient solution-processed QLED device with a doped HTL has been demonstrated by the modulation of hole transport.

Cited by 73 publications

References 41 publications

High Hall Mobility P‐type Cu₂SnS₃‐Ga₂O₃ with a High Work Function

High Hall Mobility P‐type Cu₂SnS₃‐Ga₂O₃ with a High Work Function

Elucidating the Roles of Hole Transport Layers in p‐i‐n Perovskite Solar Cells

White Electroluminescence from Aluminum Zinc Oxide Embedded in Poly(9‐vinylcarbazole)

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A highly efficient quantum dot light emitting diode via improving the carrier balance by modulating the hole transport

Abstract: A highly efficient solution-processed QLED device with a doped HTL has been demonstrated by the modulation of hole transport.

Cited by 73 publications

References 41 publications

High Hall Mobility P‐type Cu2SnS3‐Ga2O3 with a High Work Function

High Hall Mobility P‐type Cu2SnS3‐Ga2O3 with a High Work Function

Elucidating the Roles of Hole Transport Layers in p‐i‐n Perovskite Solar Cells

White Electroluminescence from Aluminum Zinc Oxide Embedded in Poly(9‐vinylcarbazole)

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High Hall Mobility P‐type Cu₂SnS₃‐Ga₂O₃ with a High Work Function

High Hall Mobility P‐type Cu₂SnS₃‐Ga₂O₃ with a High Work Function