High Hall Mobility P‐type Cu₂SnS₃‐Ga₂O₃ with a High Work Function

Abstract

A new transparent p-type oxide semiconductor (POS) is reported, Cu 2 SnS 3 -Ga 2 O 3 , having high Hall mobility of 36.22 cm 2 V −1 s −1 , and high work function of 5.17 eV. The existence of Cu 2 SnS 3 and Ga 2 O 3 phases in the film is confirmed by X-ray photoelectron spectroscopy results and the Cu 2 SnS 3 shows polycrystalline structure according to Raman spectrum and X-ray diffraction analysis. The transparent Cu 2 SnS 3 -Ga 2 O 3 exhibits the carrier concentration of 5.86 × 10 16 cm −3 , and electrical resistivity of 1.94 Ω·cm. The transparent POS is applied to green quantum light-emitting diodes (QLEDs) as a hole injection layer (HIL) because of its high work function. The QLED exhibits the maximum current efficiency of 51.72 cd A −1 , power efficiency of 31.97 lm W −1 , and external quantum efficiency (EQE) of 14.93%, which are much higher than the QLED using polyethylene dioxythophene:poly(styrenesulfonate) HIL exhibiting current efficiency of 42.66 cd A −1 , power efficiency of 20.33 lm W −1 , and EQE of 12.36%. The Cu 2 SnS 3 -Ga 2 O 3 developed in this work can be widely used as a transparent and conductive p-type oxide for thin-film devices.

Gel-based precursors for the high-performance of n-channel GaInSnZnO and p-channel CuGaSnSO thin-film transistors

“…The output curves were measured at V DS from 0 to À5 V by sweeping V GS from 0 to À5 V with a step of À1.0 V. Output curves of the pristine and gelderived CTSGO TFTs show clear pinch-off and saturation regions, where the increment of I DS with increasing ÀV GS indicated the p-channel behavior. [50][51][52][53] There is no current crowding in low V DS , indicating good ohmic contact between the S/D and channel layer, as shown in Fig. S12c and d (ESI †).…”

“…[50][51][52] The pseudo-metal halides, such as copper-thiocyanate (CuSCN) with a bandgap ($3.5 eV), exhibits lower mobility of $0.1 cm 2 V À1 s À1 , which is relatively low even when operating at a high voltage (>10 V). 53 Copper-tin-sulde-gallium oxide (CTSGO) is one of the emerging materials for p-type MO semiconductors owing to its favorable bandgap. 54,55 Therefore, developing p-type MO semiconductors has become of utmost importance for highperformance, low-power TFT electronics.…”

High Performance of Solution-Processed Amorphous p-Channel Copper-Tin-Sulfur-Gallium Oxide Thin-Film Transistors by UV/O3 Photocuring

“…Therefore, an appropriate amount of thiourea results in a transparent precursor solution without agglomeration. 55,57 The precursor solution was stirred for 5 h at room temperature before being used.…”

“…Copper-tin- sulfide-gallium oxide (CTSGO) is one of the emerging materials for p-type semiconductors owing to its favorable band gap and environmentally friendly material. 57,58 The constituent elements of CTSGO are copper, sulfur, tin, and gallium, and these are nontoxic and earth-abundant. 59−61 Here, we report the high performance of solution-processed, p-type CTSGO TFTs.…”

Effect of Sulfur Precursors on Crystallographic, Optical, and Electrical Properties of Cu2SnS3 Nanoparticles

“…All samples exhibited high electron mobility possibly due to the presence of Cu 4 SnS 4 phase in those samples as well as from the highly dispersed and delocalized conduction band minimum (CBM). It is worthy mention that electron mobility increases with annealing temperature and annealing time [58]. .…”