A Highly Linear Temperature Sensor Using GaN-on-SiC Heterojunction Diode for High Power Applications

Madhusoodhanan, Syam; Sandoval, S.; Zhao, Yue; Ware, Morgan E.; Chen, Zhong

doi:10.1109/led.2017.2714865

Cited by 36 publications

(14 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The output signal of this stage v I is a voltage that is proportional to the device ON-state current. The output of the low-pass filter is given in (4).…”

Section: B Reference Adjustment Circuitmentioning

confidence: 99%

“…The move from silicon IGBTs to Gallium Nitride (GaN) field effect transistor (FETs) has a significant impact on temperature sensing. Whilst the faster switching provides lower per-transient switching loss [4], the thermal characteristics are actually more challenging: smaller device packages and dies have lower thermal mass and increased thermal resistance. Lower thermal mass means the die will heat up faster for a given transient loss, limiting transient loss capability.…”

mentioning

confidence: 99%

“…For these reasons, temperature sensing in GaN circuits is more challenging than for silicon. Direct [4], [5] and indirect [6] sensing techniques have been reported for GaN temperature measurement. Direct measurement uses a physical sensor to measure the temperature.…”

mentioning

confidence: 99%

“…Direct measurement uses a physical sensor to measure the temperature. For example, in [4], an integrated GaN-on-SiC heterojunction diode is shown to monitor junction temperature of a GaN power device. Texas Instruments offer 600 V GaN devices with integrated driver, overcurrent protection, and overtemperature protection [7].…”

mentioning

confidence: 99%

See 3 more Smart Citations

Overtemperature Protection Circuit for GaN Devices Using a di/dt Sensor

Hedayati

Wang

Dymond

et al. 2021

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

Power semiconductor devices have maximum junction temperature limits, but it is not straightforward to sense or infer temperature inside sealed devices in running converters. One method is to observe electrical behavior that is known to be temperature dependent. For example, in some gallium nitride (GaN) power semiconductor devices, the maximum slope of the device current at turn-ON has been shown to reduce as the junction temperature increases. This article demonstrates the first noncontact overtemperature protection circuit for GaN power devices that exploits this effect and overcomes the complication that this inverse proportionality is affected by load current. A variant of a previously reported magnetic field "Infinity Sensor," named after its figure-ofeight topology and high bandwidth (>200 MHz), measures di/dt. Using the sensor signal as the only input, a detection circuit finds peak di/dt, and a high-speed integrator derives instantaneous load current. The reference voltage for the decision-making part of the circuit is automatically adjusted as a function of load current, in order to counteract the dependence of di/dt on load current. Experimental results on a 400 V, 2 kW buck converter show the protection circuit successfully activating within ±5°C of a preprogrammed junction temperature setting, independently of load current, for settings of 100, 120, and 140°C. Index Terms-Gallium Nitride (GaN), indirect temperature sensing, overtemperature protection, temperature-sensitive electrical parameters (TSEPs), turn-ON di/dt, wideband gap. I. INTRODUCTIONP ROTECTION circuits are typically necessary to make a power converter robust, increase functionality, and achieve sufficient reliability [1]-[3]. In particular, the control scheme of the converter should be capable of protecting the switches against overtemperature. A general practice in the industry is to place temperature sensing chips on the board, as close as possible to the switching devices, or, in systems using modules, the modules will often include a thermistor attached to the substrate.

show abstract

“…The output signal of this stage v I is a voltage that is proportional to the device ON-state current. The output of the low-pass filter is given in (4).…”

Section: B Reference Adjustment Circuitmentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Overtemperature Protection Circuit for GaN Devices Using a di/dt Sensor

Hedayati

Wang

Dymond

et al. 2021

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

show abstract

“…The group III-Nitride semiconductor materials have attracted a lot of interest for new generation of optoelectronic devices [1]. The advantage with these materials is the flexible bandgap varying from 0.7 to 6 eV hence covering an ultra-broad spectrum, from deep ultraviolet up to near infrared [2], allowing the development of numerous applications.…”

Section: Introductionmentioning

confidence: 99%

Review of GaN Nanowires Based Sensors

Nahhas¹

2020

AJN

View full text Add to dashboard Cite

This paper presents a review of the recent advances of GaN based nanowires sensors. GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and useful in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications specially in nanowires sensors. GaN nanowires sensors have been used in many devices such as gas sensors, biosensors, and pressure sensors. The recent aspects of GaN based nanowires sensors are presented and discussed. The performance of several sensors based devices which have been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

show abstract

Semi‐Transparent, Micrometer Resolution p‐NiO/n‐ZnO Heterojunction Diode Temperature Sensors with Ultrathin Metal Anode

Lee

Hong

et al. 2021

Adv Materials Technologies

View full text Add to dashboard Cite

Various temperature sensitive biological mechanisms have been utilized for new biomedical engineering tools such as neuromodulation, cancer cell hyperthermia or photothermal therapy. Optically transparent and high spatio‐temporal resolution temperature sensors are needed to precisely analyze the biological effects that occur in response to the temperature changes. In this work, semi‐transparent p‐NiO/n‐ZnO heterojunction diode‐based temperature sensors with 100 µm‐diameter ultrathin transparent Au/Ag metal anodes is introduced. The fabricated diode temperature sensors accurately measure temperature changes from 25 to 80 °C, which is of significant interest in many biomedical engineering applications. The sensors also exhibit adequate transparency over the entire visible light spectrum for biomedical imaging including fluorescent microscopy. Low‐power operation of the temperature sensor (<0.2 nW) is achieved to avoid a self‐heating effect. The micro‐scale spatial resolution of the transparent temperature sensors is especially useful for cellular resolution bio‐imaging, optical neural recording, and optical bio‐modulation where transparency and high‐resolution temperature sensing are necessary.

show abstract

A Highly Linear Temperature Sensor Using GaN-on-SiC Heterojunction Diode for High Power Applications

Cited by 36 publications

References 17 publications

Overtemperature Protection Circuit for GaN Devices Using a di/dt Sensor

Overtemperature Protection Circuit for GaN Devices Using a di/dt Sensor

Review of GaN Nanowires Based Sensors

Semi‐Transparent, Micrometer Resolution p‐NiO/n‐ZnO Heterojunction Diode Temperature Sensors with Ultrathin Metal Anode

Contact Info

Product

Resources

About