A highly robust process integration with scaled ONO interpoly dielectrics for embedded nonvolatile memory applications

Shum, D.; Tseng, Hsing‐Huang; Paulson, W. M.; Chang, Ko-Min; Tobin, P.J.

doi:10.1109/16.391224

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1996

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Cited by 6 publications

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“…EPOSITED oxides have attracted wide attention in the last few years as they are being used in a variety of applications such as in thin-film transistors for high-density static RAM's [1], as tunnel dielectrics in programmable memories [2], in low-temperature applications such as for flat panel displays [3], and also as MOS gate dielectrics for ULSI applications [4]- [6]. LPCVD oxides are reported to have lower defect densities, because the film is deposited rather than grown from the substrate.…”

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confidence: 99%

High-field stressing of LPCVD gate oxides

Rao

Eisele

Patrikar

et al. 1997

IEEE Electron Device Lett.

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Abstract-We have investigated gate oxide degradation as a function of high-field constant current stress for two types of oxides, viz. standard dry and LPCVD oxides. Charge injection was done from both electrodes, the gate and the substrate. Our results indicate that compared to dry oxides, LPCVD oxides show reduced charge trapping and interface state generation for inversion stress. The degradation in LPCVD oxides with constant current stress has been explained by the hydrogen model.

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confidence: 99%