A K-Band High Power and High Isolation Stacked-FET Single Pole Double Throw MMIC Switch Using Resonating Capacitor

Nguyen, Duy P.; Pham, Anh‐Vu; Aryanfar, Farshid

doi:10.1109/lmwc.2016.2597235

Cited by 36 publications

(20 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although the conventional series‐shunt switch topology has good isolation and low insertion loss, it suffers from the high insertion loss and poor isolation at the very high frequency more than 20 GHz because of the parasitic capacitances and inductances of small series lines . To overcome these problems, several low loss and high isolation topologies combined with shunt FET and quarter‐wave lines have been reported . In this article, the λ /4 double shunt‐FET structure is employed.…”

Section: Rf Front‐end Module Designmentioning

confidence: 99%

“…6 To overcome these problems, several low loss and high isolation topologies combined with shunt FET and quarter-wave lines have been reported. 7,8 In this article, the λ/4 double shunt-FET structure is employed. Since it has no series FET, low insertion loss is possible and high isolation is also achievable by optimizing the shunt branch design parameters of FET and parallel resonant lines.…”

Section: Rf Front-end Module Designmentioning

confidence: 99%

“…As for Single Pole Double Through (SPDT) switch, the 0.5 μm depletion mode pHEMT is used to obtain the high linearity, high power capability, and design accuracy with the suitable transistor model in device switching mode. For low insertion loss and high isolation of SPDT switch, the switch employs quarter‐wave length stacked‐FET topology to enhance power‐handling capability . The RF FEM package should have excellent electrical and thermal performance.…”

Section: Introductionmentioning

confidence: 99%

“…For low insertion loss and high isolation of SPDT switch, the switch employs quarterwave length stacked-FET topology to enhance powerhandling capability. 8 The RF FEM package should have excellent electrical and thermal performance. The heat dissipation of eWLP is made through the bottom plate made of copper sheet.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

28 GHz GaAs pHEMT MMICs and RF front‐end module for 5G communication systems

Ahn

Chang

Kim

et al. 2019

Micro & Optical Tech Letters

View full text Add to dashboard Cite

This article presents a 28 GHz switch and LNA chipset, and the RF front‐end module for 5G communication systems. The 28 GHz Single Pole Double Through (SPDT) switch and LNA MMICs are embedded in single RF front‐end module successfully using molding based embedded Wafer‐Level Package (eWLP) technology. For the low noise figure and high isolation, inductive source degenerated LNA topology and double shunt FET structure for SPDT switch are employed, and LNA and SPDT are implemented in single IC. The eWLP based package minimizes the parasitic component such as bond‐wire inductance and signals loss to enhance the performance of the RF front‐end module. At 28 GHz, the measured gain and noise figure of receiver path are 15.5 dB and 3.46 dB, respectively, and the IIP3 is +3 dBm at 45 mW power consumption.

show abstract

Section: Rf Front‐end Module Designmentioning

confidence: 99%

Section: Rf Front-end Module Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

28 GHz GaAs pHEMT MMICs and RF front‐end module for 5G communication systems

Ahn

Chang

Kim

et al. 2019

Micro & Optical Tech Letters

View full text Add to dashboard Cite

show abstract

“…The RF switches commonly used in telecommunication systems are based essentially on PIN diodes (Positive Intrinsic Negative diode) [1], [2], FET transistors (Field Effect Transistor) [3], [4] and on RF MEMS (Micro Electro Mechanical Systems) [5], [6]. These RF switches have advantages and disadvantages.…”

Section: Introductionmentioning

confidence: 99%

Design of a New Radio-Frequency Switch Topology with Very Low Polarization Current

Mejri¹,

Aguili²

2019

RADIOENGINEERING

View full text Add to dashboard Cite

Embedded systems are generally powered by batteries, characterized by a limited duration of electrical energy storage. For that, low power consuming RF components are often used. This work focuses on the design of a new RF switch based on one varicap diode within a series/parallel circuit topology. The latter is low-power-consuming in both ON and OFF mode and inhibits eventual nonlinearities caused by series diodes such as common PIN diodes. Before performing simulations, the diode has been characterized experimentally in the whole UHF band of interest and the extracted S-parameters have been used in the simulations of the resonating structure. The optimized switch has been measured and has showed a good agreement with simulated results in terms of high isolation (50 dB) and low insertion loss (0.1 dB). These results showed better performances compared to other structures based on RF MEMS, PIN diode or FET transistor devices, available in the literature.

show abstract

A Vanadium Dioxide‐PMMA Composite For Microwave Radiation Switching

et al. 2022

View full text Add to dashboard Cite

Reconfigurable radio-frequency components are in high demand for modern communication systems as they can be involved in multiband and multistandard electronic devices.The key part of such components is an active switching element. This work offers a way to obtain an efficient microwave switch using vanadium dioxide-poly (methyl methacrylate) composite. Differential scanning calorimetry, SQUID magnetometery, and impedance spectroscopy measurements were used to characterize the phase transition in the proposed composite. Temperature induced metal-insulator transition occurs at technologically attractive 341 K. The transition leads to a change of microwave transmission trough VO 2 -PMMA composite from À 4.9 dB for low-temperature monoclinic form to À 5.8 dB for high-temperature rutile form. This provides an ability to tune the material's transparency in the microwave range, while the shaping polymer matrix provides the proper mechanical processability of the switching element. www.chempluschem.org

show abstract

A K-Band High Power and High Isolation Stacked-FET Single Pole Double Throw MMIC Switch Using Resonating Capacitor

Cited by 36 publications

References 9 publications

28 GHz GaAs pHEMT MMICs and RF front‐end module for 5G communication systems

28 GHz GaAs pHEMT MMICs and RF front‐end module for 5G communication systems

Design of a New Radio-Frequency Switch Topology with Very Low Polarization Current

A Vanadium Dioxide‐PMMA Composite For Microwave Radiation Switching

Contact Info

Product

Resources

About