A Ka-band direct oscillation HBT VCO MMIC with a parallel negative resistor circuit

Choumei, K.; Matsuzuka, Takayuki; Suzuki, Satoshi; Hamano, S.; Kawakami, Kenji; Ogawa, Norio; Komaru, M.; Matsuda, Yoshihisa

doi:10.1109/mwsym.2005.1516885

Cited by 7 publications

(2 citation statements)

References 5 publications

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“…In high-frequency applications such as radar sensors and communication systems, compound semiconductors are widely used due to their high cut-off frequency and high break-down voltage [1], [2]. However, with the increase in the demand for low-cost high-integration systems, CMOS has become an attractive solution.…”

Section: Introductionmentioning

confidence: 99%

A 24GHz Transformer Coupled CMOS VCO for a Wide Linear Tuning Range

Song

Kim

Nam

2013

IEICE Trans. Electron.

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In this paper, a 24 GHz transformer-coupled VCO is presented for a wide linear tuning range in the 0.13-μm CMOS process. The measured results of the proposed VCO show that the center frequency is 23.5 GHz with 7.4% frequency tuning range. The output frequency curve has wide linear tuning region (5.5%) at the middle of the curve. Also, the VCO exhibits good phase noise of −110.23 dBc/Hz at an offset frequency of 1 MHz. It has a compact chip size of 430 × 500 μm 2. The VCO core DC power consumption is 5.4 mW at 1.35 V V DD .

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Section: Introductionmentioning

confidence: 99%

A 24GHz Transformer Coupled CMOS VCO for a Wide Linear Tuning Range

Song

Kim

Nam

2013

IEICE Trans. Electron.

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“…To decrease the assembly cost, each MMIC such as the oscillator and the amplifier should be integrated to a single chip. In the reported GaAs-MMICs, the HBT process, which can suppress 1/f noise, is employed for oscillators whereas the HEMT process is used for amplifiers and multipliers because of the high gain characteristics at the millimeter wave band [1][2][3][4][5][6]. As just described, an RF front-end consists of some MMICs because of different processes.…”

Section: Introductionmentioning

confidence: 99%

A Low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars

Kanaya

Amasuga

Watanabe

et al. 2010

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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To develop a low 1/f noise and high reliability InP/GaAsSb DHBT, experimental analyses on the recombination current have been carried out. The results show that the recombination current that can affect 1/f noise and reliability originates from the surface of the base. We have optimized the ledge and passivation film on the base surface of InP/GaAsSb DHBT. The optimized DHBT offers 7 dB lower 1/f noise level than the non-optimized DHBT. Additionally, in the high temperature burn-in test, no degradation has been induced even after 1,000 hr. It can satisfy the criterion of automotive radars. The W-band oscillator with the optimized DHBT delivers a remarkably low phase noise of -107 dBc/Hz at 1MHz-offset. This phase noise is 10 dB lower than that of the non-optimized HBT oscillator. These results experimentally confirm that decreasing 1/f noise is effective for the design of a low phase noise oscillator using InP/GaAsSb DHBT.To our knowledge, this is the first report to reveal that the base surface structure of InP/GaAsSb DHBT is a key factor in the improvement of reliability and phase noise.

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