Extensive measurements were performed at different temperatures on GaAs HBT's in order to obtain a simple Large Signal Model usable in CAD. The model was experimentally evaluated by DC, S and Power Spectrum measurements and good correspondence was obtained between measurements and experiment.

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A h'gh efficiency and very low voltage operation MMIF using planar self-aligned gate (SAG) FET had been developed for the 1.9 GHz Japanese Persohal Handy Phone System (PHS). The MMIC intdgrates a power amplifier (PA), a low noise amplifier (LNA), a T/R switch (SW) and a negative voltage generator (NVG). The MMIC exhibited high bower added efficiency of 39% at the output powel (Pout) of 21.0 dBm, which is the highest efficiendy in the 2.0 V single supply voltage operation R F~ front-end MMIC ever reported. i 1 I. IntroductionToday, a Li-ibn battery is mainly used as a power supply $r the PHS, because off its high current density.1 However, a Li-ion battery is one components in the PHS. density of an inexsteadily and is strongly rehired for RF power amplifier, is required. e operation time of 3 V supplies front-end circuits such a mixer and an NVG for single supply voltage operation are required for miniaturization and cost reduction. This paper reports the design and the experimental results of a newly developed 2 V singlesupply voltage operation RF front-end MMIC for 1.9 GHz PHS, which meets the all of the above requirements for the first time. FET design and RF characteristics of discrete FETWe have employed a planar SAGFET, which is suitable for multi-functional integration, because of good controllability of threshold voltage [ 11. We have already reported a 3 V single-supply voltage operation RF front-end MMIC with the SAGFET [2]. To realize high efficiency operation under 2 V supply, we have developed a dual-and a singlegate SAGFET for the PA. Fig. 1 shows the cross Source wswGate Draln (a) (b) Fig. 1. Schematic cross-sections of SAGFET: (a) single gate FET and (b) dual gate FET

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