A kinetic Monte Carlo study of the growth of Si on Si(100) at varying angles of incident deposition

Levine, Steven W; Engstrom, J. R.; Clancy, Paulette

doi:10.1016/s0039-6028(97)00904-7

Cited by 54 publications

(26 citation statements)

References 41 publications

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“…[3][4][5][6][7][8] Several types of computer simulations have been used to study vapor deposited thin film growth including ballistic deposition, 9,10 ''solid-on-solid'' models, 10 and kinetic Monte Carlo. 11 Due to the size of the simulations necessary to study thin film morphology, molecular dynamics calculations have limited applicability. Since solid-on-solid models do not al-low for the formation of voids, we did not consider these models for simulating porous ASW.…”

Section: Introductionmentioning

confidence: 99%

“…Kinetic Monte Carlo simulations have the advantage of fairly ''realistic'' modeling of the processes such as diffusion in cases where the rates of various elementary steps are well characterized such as in silicon thin film growth. 11 However, for simulating porous ASW, the molecules do not occupy well defined lattice sites and diffusion in the porous material is poorly understood. Therefore, a kinetic Monte Carlo model for the growth of porous ASW would rest on many simplifications and assumptions, reducing the advantages of the method.…”

Section: Introductionmentioning

confidence: 99%

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Control of amorphous solid water morphology using molecular beams. II. Ballistic deposition simulations

Kimmel

Dohnálek

Stevenson

et al. 2001

The Journal of Chemical Physics

120

139

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Interaction of chlorodifluoromethane with ultrathin solid water filmsBallistic deposition simulations of thin film growth were performed. The results of the simulations are compared to experiments of N 2 adsorption by porous amorphous solid water thin films. The simulations are in qualitative agreement with the experimental observations: The porosity of the thin films is controlled by using a collimated beam to vapor deposit the films. Films with normal or near normal growth angles (ϳ0°) are relatively dense and smooth. Films with larger growth angles are highly porous and the average pore size increases as the growth angle increases. The simulations indicate that for growth angles greater than ϳ70°, adsorption into the largest pores is not possible leading to the experimentally observed maximum in N 2 adsorption by porous amorphous solid water at ϭ70°.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Control of amorphous solid water morphology using molecular beams. II. Ballistic deposition simulations

Kimmel

Dohnálek

Stevenson

et al. 2001

The Journal of Chemical Physics

120

139

View full text Add to dashboard Cite

show abstract

“…[22][23][24][25][26][27][28][29][30][31][32][33][34][35] These studies find that metal ions are steered toward the top of existing islands by long-range attractive forces at angles greater than 50°and that the degree of surface roughness increases as the angle increases from the surface normal. Fragmentation of both types of ions increased when the ion energies were increased to 50 eV in both the experiments and simulations.…”

Section: Introductionmentioning

confidence: 99%

Study of angular influence of C3H5+ ion deposition on polystyrene surfaces using molecular dynamics simulations

Jang¹,

Ni²,

Sinnott³

2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The influence of incident angle on the interaction of polyatomic hydrocarbon ions ͑C 3 H 5 ϩ ͒ with polystyrene surfaces is examined using classical molecular dynamics simulations. The forces are determined using the reactive empirical bond order method developed by Tersoff and parametrized by Brenner. The total incident energy is 50 eV and the angles considered are 0°͑normal to the surface͒, 15°, 45°, and 75°. At each angle, the outcomes of 80 trajectories are compiled and averaged. The results show that intact ions scatter from the surface in only 2% of the trajectories and that the ions dissociate in 61% of the trajectories at normal incidence. At 75°, intact ions scatter away in 56% and they dissociate in only 30% of the trajectories. The largest total amount of carbon is deposited at normal incident angles. However, more ions or ion fragments are predicted to remain near the surface ͑penetrate 3.5-5.5 Å͒ at 45°. This is because ion fragments tend to penetrate more deeply ͑6-7 Å͒ into the surface at smaller angles. Consequently, some inclined angles are found to be most efficient for the deposition of the precursors necessary for polymer thin-film growth.

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“…The energy of monomer diffusion E s for Si/Si͑001͒ is about 0.67Ϯ 0.08 eV. 6,22 We change the substrate temperature simultaneously from 570 K ͑about 300°C͒ to 970 K ͑about 700°C͒ at deposition rate F of 0.1, 0.3, and 0.5 ML/s, respectively and compare the results. 25,26 The numerical value for E 1 and E 2 are chosen to be 0.6 and 0.1 eV.…”

Section: Resultsmentioning

confidence: 99%

Transition temperature in the growing of poly-Si/amorphous-SiO2 by electron-beam evaporation

Jiang

Wei

Chen

et al. 2010

Journal of Applied Physics

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Articles you may be interested inEffect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser Appl. Phys. Lett. 104, 242102 (2014); 10.1063/1.4883863 Vacuum-enhanced nickel-induced crystallization of hydrogenated amorphous silicon J. Appl. Phys. 112, 073506 (2012); 10.1063/1.4757574Electron backscattered diffraction study of poly-Si by Ni-mediated crystallization of amorphous silicon using a SiO 2 nanocap Structural and electrical properties of thin microcrystalline silicon films deposited by an electron cyclotron resonance plasma discharge of 2% SiH 4 / Ar further diluted in H 2

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A kinetic Monte Carlo study of the growth of Si on Si(100) at varying angles of incident deposition

Cited by 54 publications

References 41 publications

Control of amorphous solid water morphology using molecular beams. II. Ballistic deposition simulations

Control of amorphous solid water morphology using molecular beams. II. Ballistic deposition simulations

Study of angular influence of C3H5+ ion deposition on polystyrene surfaces using molecular dynamics simulations

Transition temperature in the growing of poly-Si/amorphous-SiO2 by electron-beam evaporation

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