A Kinetics Study of the Atmospheric Pressure CVD Reaction of Silane and Nitrous Oxide

Abstract

A mechanistic study of oxide deposition from silane and nitrous oxide between 495~ and 690~ was performed in a laminar flow, cool wall reactor. Results indicated the existence of two distinct chemical pathways. At high nitrous oxide concentrations, the deposition reaction is dominated by radical chain chemistry initiated by the decomposition of N20. At lovcer N20 concentrations, the decomposition of siIane to form silylene (SiH~) initiates the deposition. Studies of the reaction of disilane and nitrous oxide confirmed the role of Sill2 in the deposition. Reactions involving Sill2 are used to explain the observed growth of sub-stoiehiometric oxides under low N20 conditions. Extensive use has been made of the chemical vapor deposition (CVD) reaction of silane and nitrous oxide to deposit silicon dioxide thin films. This reaction system is particularly important because sub-stoichiometric oxide can be deposited under appropriate reaction conditions (1). Present address: IBM General Technology Division, Hopewell Junction, New York 12533. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.214.17.222 Downloaded on 2015-03-09 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.214.17.222 Downloaded on 2015-03-09 to IP

Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH4 and N2O

“…Previous studies of SiO 2 formation from SiH 4 and N 2 O using atmospheric pressure CVD ͑APCVD͒ have reported that both H 2 and H 2 O are plausible reaction products at temperatures from 495 to 690°C. 16,17 Under the low pressure RTCVD conditions employed here, the formation of H 2 is the dominant ͑by Ͼ100ϫ͒ if not exclusive reaction channel for the deposition of SiO 2 , a result confirmed under both static and regular process conditions. The lower pressures employed in the RTCVD process are expected to enhance surface processes ͑e.g., as compared to gas phase reactions found more commonly at APCVD conditions͒.…”

Silylenes

“…When large ratios of N 2 O and Si 2 H 6 are subjected to LPCVD conditions, it has been suggested that Si and SiO are codeposited, with SiH 2 contributing to Si deposition 404 . It has been suggested that the species believed to be responsible for SiO deposition, the elusive parent silanone H 2 SiDO, is formed from SiH 2 (equation 120) 405 .…”

Combustion of silane-nitrous oxide-argon mixtures: Analysis of laminar flame propagation and condensed products

“…Silane (SiH 4 ) is a specialty gas widely employed in the semi-conductor and electronic component manufacturing industry [1]. Mixed with an oxidant such as nitrous oxide (N 2 O), silane can lead to the formation of insulating thin films of silicon oxide which protect the semi-conductors and electronic components [2]. Several studies on SiH 4 -N 2 O mixtures have mainly focused on the silica film growth rate under chemical vapor deposition conditions [2,3].…”