A Ku-Band Receiver with 12-to-20-DB Gain, −14-DBM IPLDB in 65-NM CMOS Technology

Cheng, Depeng; Li, Lianming; Xie, Min; Sheng, Bin; You, Xiaohu

doi:10.23919/apmc.2018.8617357

Cited by 2 publications

(1 citation statement)

References 4 publications

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“…The NF is also almost double as compared to the proposed work. The 12-20 GHz receiver in [19] accomplishes good wideband reception and linearity with gain performance similar to the proposed work, but is inferior in terms of NF, input matching, and power consumption. Similarly, [20] proposed a receiver with superior power consumption and gain as compared to the proposed receiver, but it has a relatively narrowband reception of 1.48 GHz and poor NF.…”

Section: Measurement Resultsmentioning

confidence: 58%

A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

et al. 2020

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This paper presents a K u -band RF receiver front-end with broadband impedance matching and amplification. The major building blocks of the proposed receiver front-end include a wideband low-noise amplifier (LNA) employing a cascade of resistive feedback inverter (RFI) and transformer-loaded common source amplifier, a down-conversion mixer with push–pull transconductor and complementary LO switching stage, and an output buffer. Push–pull architecture is employed extensively to maximize the power efficiency, bandwidth, and linearity. The proposed two-stage LNA employs the stagger-tuned frequency response in order to extend the RF bandwidth coverage. The input impedance of RFI is carefully analyzed, and a wideband input matching circuit incorporating only a single inductor is presented along with useful equivalent impedance matching models and detailed design analysis. The prototype chip was fabricated in 45-nm CMOS technology and dissipates 78 mW from a 1.2-V supply while occupying chip area of 0.29 mm 2 . The proposed receiver front-end provides 21 dB conversion gain with 7 GHz IF bandwidth, 3.5 dB NF, −15.7 dBm IIP 3 while satisfying <−10 dB input matching over the whole input band.

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Section: Measurement Resultsmentioning

confidence: 58%

A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

et al. 2020

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38-GHz CMOS Linearized Receiver With IM3 Suppression, P _{1 dB}/IP3/RR3 Enhancements, and Mitigation of QAM Constellation Diagram Distortion in 5G MMW Systems

Chen

Wang

et al. 2020

IEEE Trans. Microwave Theory Techn.

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A Ku-Band Receiver with 12-to-20-DB Gain, −14-DBM IPLDB in 65-NM CMOS Technology

Cited by 2 publications

References 4 publications

A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

38-GHz CMOS Linearized Receiver With IM3 Suppression, P _{1 dB}/IP3/RR3 Enhancements, and Mitigation of QAM Constellation Diagram Distortion in 5G MMW Systems

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A Ku-Band Receiver with 12-to-20-DB Gain, −14-DBM IPLDB in 65-NM CMOS Technology

Cited by 2 publications

References 4 publications

A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

A Ku-Band RF Front-End Employing Broadband Impedance Matching with 3.5 dB NF and 21 dB Conversion Gain in 45-nm CMOS Technology

38-GHz CMOS Linearized Receiver With IM3 Suppression, P 1 dB/IP3/RR3 Enhancements, and Mitigation of QAM Constellation Diagram Distortion in 5G MMW Systems

Contact Info

Product

Resources

About

38-GHz CMOS Linearized Receiver With IM3 Suppression, P _{1 dB}/IP3/RR3 Enhancements, and Mitigation of QAM Constellation Diagram Distortion in 5G MMW Systems