Abstract:Important aspects and simulation results related to the RF integrated circuit design of a single-ended LowNoise Amplifier (LNA) are presented and discussed. The simulated values for the power consumption, Input-IP3 and Noise Figure (NF) are 10mW, 0.32dBm and 1.53dB, at the center frequency fc=5.5GHz, respectively. An experimentally extensively verified design kit for a 0.25um BiCMOS technology is usedfor all components and devices exceptfor the inductors, which are assumed to be ideal. A well established CMOS … Show more
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