A Large-Area Transferable Wide Band Gap 2D Silicon Dioxide Layer

Büchner, Christin; Wang, Zhujun; Burson, Kristen M.; Willinger, Marc Georg; Heyde, Markus; Schlögl, Robert; Freund, Hans‐Joachim

doi:10.1021/acsnano.6b03929

Cited by 49 publications

(54 citation statements)

References 49 publications

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“…Two-dimensional materials form a class of materials with unique properties [1][2][3][4][5]. Several freestanding 2D materials are transferable and stable under various conditions [6,7]. The flexibility of 2D layers is a big advantage for a range of applications, for example flexible electronics [8], where both conductive and insulating layers are needed.…”

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confidence: 99%

Bending Rigidity of 2D Silica

et al. 2018

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A chemically stable bilayers of SiO_{2} (2D silica) is a new, wide band gap 2D material. Up till now graphene has been the only 2D material where the bending rigidity has been measured. Here we present inelastic helium atom scattering data from 2D silica on Ru(0001) and extract the first bending rigidity, κ, measurements for a nonmonoatomic 2D material of definable thickness. We find a value of κ=8.8 eV±0.5 eV which is of the same order of magnitude as theoretical values in the literature for freestanding crystalline 2D silica.

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confidence: 99%

Bending Rigidity of 2D Silica

et al. 2018

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“…16 Mechanical transfer from the growth substrate to a new support has been recently achieved. 32 Therefore, this material can be envisaged to be used as a stacking brick in Van der Waals heterostructures. Like graphene, its properties can be modified by doping, 31,33,34 intercalation, [35][36][37][38] and creation of defects.…”

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confidence: 99%

Electronic Band Structure of Ultimately Thin Silicon Oxide on Ru(0001)

et al. 2019

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Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a 1 arXiv:1902.04514v1 [cond-mat.mtrl-sci] 12 Feb 2019 dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, we establish the existence of two sub-lattices defined by metal-oxygen-silicon bridges involving inequivalent substrate sites. We further discover four electronic bands below Fermi level, at high binding energies, two of them forming a Dirac cone at K point, and two others forming semiflat bands. While the latter two correspond to hybridized states between the oxide and the metal, the former relate to the topmost silicon-oxygen plane, which is not directly coupled to the substrate. Our analysis is based on high resolution X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and density functional theory calculations.Keywords ultrathin silicon oxide film, monolayer, photoemission spectroscopy, density functional theory calculations, metal-oxide interface Recently, metal-supported crystalline silicon oxide films have been grown as thin as mono-

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“…Two-dimensional silica (2D-SiO 2 ) has attracted attention, as it is one of the thinnest insulating materials which can be used in catalysis and for isolating graphene from metal substrates, making vertical heterostructures 5−9 that can be transferred between substrates. 10 However, in spite of the substantial progress in its synthesis, little is known about vibrational properties of this 2D system and its Raman spectra. Moreover, it is desirable to have a quick nondestructive technique, such as Raman spectroscopy (RS) to identify this material.…”

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Vibrational Properties of a Two-Dimensional Silica Kagome Lattice

et al. 2016

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Kagome lattices are structures possessing fascinating magnetic and vibrational properties, but in spite of a large body of theoretical work, experimental realizations and investigations of their dynamics are scarce. Using a combination of Raman spectroscopy and density functional theory calculations, we study the vibrational properties of two-dimensional silica (2D-SiO2), which has a kagome lattice structure. We identify the signatures of crystalline and amorphous 2D-SiO2 structures in Raman spectra and show that, at finite temperatures, the stability of 2D-SiO2 lattice is strongly influenced by phonon–phonon interaction. Our results not only provide insights into the vibrational properties of 2D-SiO2 and kagome lattices in general but also suggest a quick nondestructive method to detect 2D-SiO2.

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A Large-Area Transferable Wide Band Gap 2D Silicon Dioxide Layer

Cited by 49 publications

References 49 publications

Bending Rigidity of 2D Silica

Bending Rigidity of 2D Silica

Electronic Band Structure of Ultimately Thin Silicon Oxide on Ru(0001)

Vibrational Properties of a Two-Dimensional Silica Kagome Lattice

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