A Large Thermal Elasticity of the Ordered FeRh Alloy Film With Sharp Magnetic Transition

Hashi, S.; Yanase, Shunji; Okazaki, Y.; Inoue, M.

doi:10.1109/tmag.2004.832445

Cited by 28 publications

(15 citation statements)

References 13 publications

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“…6 Furthermore, the above mentioned films were grown on MgO (001) substrates, which cannot be utilized in practical applications. Some groups 7,8 have also reported the growth of FeRh films on amorphous substrates like glass and thermally oxidized Si substrates. However, a sharp transition was only achieved for thick films ($150 nm) using these substrates.…”

Section: Introductionmentioning

confidence: 99%

Suppression of low-temperature ferromagnetic phase in ultrathin FeRh films

Han

Qiu

Yap

et al. 2013

Journal of Applied Physics

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Highly ordered B2 FeRh films with sharp magnetic transitions from the antiferromagnetic (AF) to ferromagnetic (FM) states were prepared on thermally oxidized Si wafers with thicknesses as low as 10 nm. It is found that the transition temperature increases as the thickness decreases from 80 nm to 15 nm, and then decreases from 15 nm to 10 nm. While the ratio of the residual magnetization to the maximum magnetization keeps nearly unchanged for the film thickness of 15 nm and larger, it increases significantly when the thickness is reduced to 10 nm. This residual magnetization was suppressed by slightly increasing the Rh atomic content in 10 nm thick FeRh films. Low-pressure deposition is found to play an important role in the stabilization of the AF phase. By depositing FeRh films at an extremely low pressure of 0.057 Pa, a residual magnetization as small as 13.5 emu/cc at 100 K was observed for a film with a nominal thickness of 10 nm deposited on Si wafer. This value was further reduced to 6 emu/cc when the film is deposited on MgO substrates due to much improved FeRh crystallinity. These results are in close agreement with theoretical predictions on defect and interface induced FM stabilization.

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Section: Introductionmentioning

confidence: 99%

Suppression of low-temperature ferromagnetic phase in ultrathin FeRh films

Han

Qiu

Yap

et al. 2013

Journal of Applied Physics

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“…Hashi et al reported that the high quality FeRh thin films showing a sharp phase transition could be obtained by ion-beam sputtering and post-annealing [12]. The base pressure of the sputtering chamber was about 2.0 Â 10 À6 Pa.…”

Section: Methodsmentioning

confidence: 99%

In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

Matsui

Aikoh

Sakamaki

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…[4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] However, the high-temperature heat treatments can induce atomic interdiffusion at the interface, leading to the degradation of the structural and magnetic properties. Therefore, the formation of metallic multilayers with a top FeRh layer is quite difficult.…”

Section: Introductionmentioning

confidence: 99%

Exchange coupling in metallic multilayers with a top FeRh layer

et al. 2016

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We study magnetic properties of metallic multilayers with FeRh/ferromagnet interfaces grown by low-temperature molecular beam epitaxy. Room-temperature coercivity of the ferromagnetic layers is significantly enhanced after the growth of FeRh, proving the existence of the exchange coupling between the antiferromagnetic FeRh layer and the ferromagnetic layer. However, exchange bias is not clearly observed probably due to the presence of disordered structures, which result from the lattice strain at the FeRh/ferromagnet interfaces due to the lattice mismatch. We infer that the lattice matched interface between FeRh and ferromagnetic layers is a key parameter for controlling magnetic switching fields in such multilayer systems.

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A Large Thermal Elasticity of the Ordered FeRh Alloy Film With Sharp Magnetic Transition

Cited by 28 publications

References 13 publications

Suppression of low-temperature ferromagnetic phase in ultrathin FeRh films

Suppression of low-temperature ferromagnetic phase in ultrathin FeRh films

In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

Exchange coupling in metallic multilayers with a top FeRh layer

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