A laser-recrystallization technique for silicon-TFT integrated circuits on quartz substrates and its application to small-size monolithic active-matrix LCD's

Fujii, Eiji; Senda, K.; Emoto, Fumiaki; Yamamoto, A.; Nakamura, Akira; Uemoto, Yasuhiro; Kano, G.

doi:10.1109/16.43808

Cited by 20 publications

(7 citation statements)

References 13 publications

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“…Due to its higher carrier mobility than that of amorphous silicon (a-Si) film, poly-Si film has great potential in fabricating higher speed, higher resolution and brighter TFT-LCD. Up to the present, low temperature poly-Si (LTPS) films for LTPS-TFT application are usually prepared from a-Si films fabricated at temperatures around 250-650 -C and then followed by post-treatment methods such as excimer laser annealing (ELA) [1][2][3][4], solid phase crystallization (SPC) [1,5 -7], metal-induced crystallization (MIC) [8][9][10], etc. However, each post-treatment technique has advantages and disadvantages.…”

Section: Introductionmentioning

confidence: 99%

Direct fabrication of large-grain polycrystalline silicon thin films by RF-biased RF-PECVD at low temperature

Gu¹,

Chen²

2006

Thin Solid Films

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Section: Introductionmentioning

confidence: 99%

Direct fabrication of large-grain polycrystalline silicon thin films by RF-biased RF-PECVD at low temperature

Gu¹,

Chen²

2006

Thin Solid Films

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“…This process is sometimes called the excimer laser annealing method 3 . However, it may not be able to achieve the field‐effect mobility of an electronic component with the laser‐crystallized technology 4 . This is primarily due to the high power of a laser, which causes the silicon film to melt and solidify instantly.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Experimental Analysis in Excimer‐Laser Crystallization of Amorphous Si Films on a Glass Substrate with Different Buffer Layers

Chen

Chang

Long

2007

Journal of the American Ceramic Society

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In this work, the excimer-laser-induced crystallization of amorphous silicon (a-Si) films was investigated numerically and experimentally. The basic structure is an a-Si film on a glass substrate. The control parameters are the laser intensity and the pulse number. The effects of SiO 2 and Si 3 N 4 layers located between the Si film and glass substrate were also studied.In the microstructure analysis of the laser-irradiated area, the critical fluences (full-melt threshold, FMT) between the partial melting and complete melting regimes can be found by applying scanning electron microscopy. An efficient two-dimensional numerical model is carried out to predict the critical fluences (FMT) and the transient temperature distribution during the laser processing. From the analysis of temperature responses, the FMT obtained from the simulation results of the proposed model agree fairly well with those from the experimental data reported in the literature and acquired in this research.

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“…This process is sometimes named the Excimer Laser Annealing Method [3]. However, it may not be able to achieve the field-effect mobility of an electronic component with the laser-crystallized technology [4]. This is primarily due to the high power of laser that causes the silicon film to instantly melt and solidify.…”

Section: Introductionmentioning

confidence: 99%

Experimental Analysis for Low-Temperature Poly-Si Films Produced by Using the Excimer Laser Annealing Method

Chen

Long

2006

MSF

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This paper is to investigate the effects on grain size of different working conditions for making poly Si films by using the excimer laser annealing method. In this research, a KrF excimer laser of 248 nm in wavelength is used to irradiate a-Si films of 0.1 μm in thickness on glass substrate to produce poly-Si ones. The control parameters are laser intensity (200~500 mJ/cm2), pulse number (1~10 shots) and coverage fraction (0~100%). Besides, the effect of a SiO2 layer is also studied, which is utilized as a heat-isolated zone located between the Si film and glass substrate. Average grain sizes from SEM photos are used to analyze the effects of these parameters. Purely from the heat transfer view, the Si film obtains more energy would have the slower cooling or solidification rate, which results in the larger grain. From the experimental results, if the melt pool is within the range of Si film or does not contact its neighboring layer (SiO2 layer or glass substrate), the more absorbed energy from the higher energy intensity, the larger pulse number or the bigger coverage fraction can have the larger average grain size. However, with large enough energy, the melt pool could go through the Si film and touch the lower layer. This would induce much more nuclei due to the homogeneous nucleation in the pool and the heterogeneous nucleation near the interface between the film and the neighboring layer. The resulting grain size is much smaller than that of the former one. The transition points of these two cases for different control parameters can be obtained from the experimental results in this study. When the energy from the laser is small, the SiO2 layer acts like a heat absorber and makes the grain size smaller than that of not having the SiO2 layer. On the other hand, when the energy is large, the SiO2 layer becomes a heat insulator and makes the grain size larger.

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A laser-recrystallization technique for silicon-TFT integrated circuits on quartz substrates and its application to small-size monolithic active-matrix LCD's

Cited by 20 publications

References 13 publications

Direct fabrication of large-grain polycrystalline silicon thin films by RF-biased RF-PECVD at low temperature

Direct fabrication of large-grain polycrystalline silicon thin films by RF-biased RF-PECVD at low temperature

Modeling and Experimental Analysis in Excimer‐Laser Crystallization of Amorphous Si Films on a Glass Substrate with Different Buffer Layers

Experimental Analysis for Low-Temperature Poly-Si Films Produced by Using the Excimer Laser Annealing Method

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