Direct fabrication of large-grain polycrystalline silicon thin films by RF-biased RF-PECVD at low temperature

Gu, Jian-De; Chen, Peili

doi:10.1016/j.tsf.2005.07.053

Cited by 17 publications

(8 citation statements)

References 18 publications

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“…It is expected that increasing the bias power will decrease the deposition rate due to the enhanced sputtering of adsorbed radicals. This was observed with the SiH 4 -H 2 -Ar plasma [6,14]. In contrast, the deposition rate variation in Fig.…”

mentioning

confidence: 77%

“…Separate control of the plasma density and ion energy is another attractive feature. Recently, PECVD in SiN films has been studied at low temperatures of less than 100°C [1][2][3][4][5][6][7][8]. SiN films deposited at room-temperature have shown several advantages, such as a low hydrogen content [9], a relatively high deposition rate, and a smooth surface roughness at a lower radio frequency (rf) source power [4].…”

Section: Introductionmentioning

confidence: 99%

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Radio frequency bias power effects on silicon nitride film deposited in SiH4-NH3 using a plasma-enhanced chemical vapor deposition

Kim

2009

Met. Mater. Int.

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Silicon nitride films were deposited at room temperature in a plasma-enhanced chemical vapor deposition system. Ion energy and ion energy flux were measured with an ion energy analysis system. The effects of the radio frequency bias power on the ion energy distribution, deposition rate, refractive index, and surface roughness were examined along with the correlations between the ion energy diagnostics and film properties. The bias power varied from 30 W to 90 W. The surface roughness measured by atomic force microscopy was detailed in terms of the mean surface roughness and major pixel density. The deposition rate increased from 271 Å/min to 308 Å/min, increasing the bias power and correlation with the ion energy. Particularly, the refractive index increased with a decrease in the bias power. This is a unique feature resulting from the room-temperature deposition of silicon nitride film controlled in terms of the bias power. Moreover, the large variation from 1.94 to 2.49 facilitates the control of the refractive index as a function of the bias power. Strong dependency of the refractive index on the ion energy flux was also identified.

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mentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Radio frequency bias power effects on silicon nitride film deposited in SiH4-NH3 using a plasma-enhanced chemical vapor deposition

Kim

2009

Met. Mater. Int.

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“…In the present experiments, P H 2 , T sub and W VHF in the APECT process were varied in the range 6.7 × 10 −3 to 5.3 × 10 −2 MPa, 200-600 • C and 16-160 W/cm 2 , respectively. The thickness of the prepared Si films was calculated from the mass gain of the substrate and the deposition area using the density of crystalline Si (2.35 g/cm 3 ). Mass measurements were performed by an electronic balance (METTLER-TOLEDO AB104-S).…”

Section: Methodsmentioning

confidence: 99%

High‐rate preparation of thin Si films by atmospheric‐pressure plasma enhanced chemical transport

Kamada¹,

Kishimoto²,

Kakiuchi³

et al. 2008

Surface & Interface Analysis

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Polycrystalline Si films were prepared by chemical transport using near-atmospheric-pressure pure hydrogen plasma (6.7×10 −3 to 5.3 × 10 −2 MPa). Substrate temperatures were varied from 200 to 600• C and solid Si source was used as the feedstock to generate SiH x species. To generate high-density stable glow hydrogen plasma at near atmospheric pressure, 150 MHz very high frequency (VHF) power was used. The dependence of deposition rate on various preparation parameters, such as VHF input power, hydrogen pressure, and substrate temperature, was investigated. The deposition rate increased with increasing VHF power density and substrate temperature. The attained deposition rate on glass substrates was 15 nm/s at 400• C. Prepared Si films exhibited columnar structures along the growth direction. The maximum lateral grain size was 5 µm at the film thickness of 15 µm. It was found by Raman spectroscopy that the crystalline fraction of prepared Si film would not be influenced with increasing deposition rate (R d ).

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“…Various techniques have been explored for fabricating poly-Si films, which can be divided into two large groups; one is direct deposition of poly-Si thin films, and the other one is converting amorphous silicon (a-Si) to crystallized poly-Si. For direct deposition method, low chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) [5][6][7] can be given as example. On the other hand, solid phase crystallization (SPC), excimer laser annealing (ELA), and metal induced crystallization (MIC) [8][9][10][11][12][13] methods convert the deposited a-Si films into crystallized poly-Si films.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature direct deposition of polycrystalline silicon thin film on glass substrate by RF magnetron sputtering with applied substrate bias

Hashim

Mahzan

Herman

et al. 2012

2012 IEEE Symposium on Humanities, Science and Engineering Research

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Polycrystalline silicon (poly-Si) thin film was successfully deposited on glass substrate without substrate heating using radiofrequency (RF) magnetron sputtering. The effect of RF power and substrate bias on the structural properties of the thin films was studied. The film thickness and the deposition rate increased with the increasing RF power. Raman spectroscopy results it showed that the peak was around 503 cm -1 from the deposition with 200W RF power, but when the substrate bias was applied, the peak was at 515 cm -1 , showing that the thin film crystalline changed from nanocrystalline for the deposition without the substrate bias, to almost polycrystalline for the deposition with the substrate bias.

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Direct fabrication of large-grain polycrystalline silicon thin films by RF-biased RF-PECVD at low temperature

Cited by 17 publications

References 18 publications

Radio frequency bias power effects on silicon nitride film deposited in SiH4-NH3 using a plasma-enhanced chemical vapor deposition

Radio frequency bias power effects on silicon nitride film deposited in SiH4-NH3 using a plasma-enhanced chemical vapor deposition

High‐rate preparation of thin Si films by atmospheric‐pressure plasma enhanced chemical transport

Low-temperature direct deposition of polycrystalline silicon thin film on glass substrate by RF magnetron sputtering with applied substrate bias

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