A length-scalable compact model for InP DHBTs

Abstract

A parameter set for a modified HICUM/Level0 compact model has been extracted for an InP DHBT production technology. The parameters can be scaled to describe devices of different emitter lengths very well by using simple scaling equations. This indicates that major elements of the equivalent circuit are estimated correctly and is the first step towards a fully scalable compact model for a InP HBT technology.

Determining the base resistance of InP HBTs: An evaluation of methods and structures

“…For each process, several devices were measured which differed in emitter mesa width (b E0 ), length (l E0 ) and area [27] and a HICUM/L0 model was created based on singletransistor extraction methods [39]. For the two other technologies, only HICUM/L0 model parameters could be determined since only single-transistor structures were available.…”