A Linear GaN High Power Amplifier MMIC for &lt;roman&gt;Ka&lt;/roman&gt;-Band Satellite Communications

Noh, Youn Sub; Yom, In‐Bok

doi:10.1109/lmwc.2016.2585553

Cited by 42 publications

(10 citation statements)

References 5 publications

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“…Wu et al realize a peak output power of 1.66 W with a peak PAE of 35% in a continuous-wave mode at 93 GHz using 0.1 µm process [48]. Youn et al realize a peak output power of 9.03 W with a peak PAE of 35% under CW operation at 21.5 GHz using 0.15 µm process [56].…”

Section: B Performance Of Gan Mmicsmentioning

confidence: 99%

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GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

et al. 2020

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High frequency and high efficiency operation is one of the premier interests in the signal and energy conversion applications. The wide bandgap GaN based devices possess superior properties and have demonstrated exceeding performance than Si or GaAs devices. In order to further exploit the potential of GaN electronics, monolithic power integration is proposed. Firstly, this paper discusses the structure and properties of GaN power devices to explain the choice of lateral integration in the view of GaN power ICs. Then the state-of-the-art performance of GaN power integration in two major application areas is reviewed, which are the microwave power amplification and DC-DC power conversion. The GaN power integration technologies in MMIC platforms are summarized in terms of the gate length, operation frequency and power added efficiency of ICs. On the other hand, the smart GaN power IC platforms have boosted the development of DC-DC power converters. Demonstrations of high frequency (>1 MHz) and high efficiency (>95 %) converters with various kinds of integration technology and topology are reviewed. Lastly novel integration schemes and methods are introduced to stimulate new thoughts on GaN power integration road.

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Section: B Performance Of Gan Mmicsmentioning

confidence: 99%

“…Optical images of the fabricated MMIC PAs from (a)[48] with 0.1 µm process and (b)[56] with 0.15 µm process.…”

mentioning

confidence: 99%

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

et al. 2020

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“…The unit-cell size of a phased array decreases linearly with free-space wavelength, while circuit size decreases slower and for highpower densities GaN MMICs are a possible solution. Published examples of GaN PAs at K-band exist in both commercial [1,2] and research processes [3][4][5][6][7]. Doherty amplifiers [8,9] and a single-ended linear amplifier [3] have also been designed in GaN at K-band to address back-off efficiency and linearity, respectively.…”

Section: Introductionmentioning

confidence: 99%

“…Published examples of GaN PAs at K-band exist in both commercial [1, 2] and research processes [3–7]. Doherty amplifiers [8, 9] and a single-ended linear amplifier [3] have also been designed in GaN at K-band to address back-off efficiency and linearity, respectively.…”

Section: Introductionmentioning

confidence: 99%

Distortion mitigation for 100 and 250 MHz discrete supply modulation of a three-stage K-band MMIC PA

Duffy

Lasser²,

Popović³

2020

Int. J. Microw. Wireless Technol.

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Abstract This paper presents a high-efficiency linear GaN K-band transmitter for broadband high peak-average power ratio (PAPR) signals. A GaN MMIC 18.5–24 GHz three-stage power amplifier with over 4 W peak output power, 20 dB saturated gain, and 40% peak PAE is supply-modulated with a four-level discrete dynamic supply GaN MMIC. For 100 MHz signals with ${\rm PAPR}\gt 10\, {\rm dB}$ , we demonstrate an average efficiency improvement from 14 to 20% with a simultaneous linearity improvement in noise power ratio (NPR) from 23 to 26 dB through a shaping function focused on gain linearization. For 250 MHz signal bandwidth, there is no observed degradation in NPR and the efficiency is improved by 5 percentage points. For discrete supply modulation, the switching transients between levels are experimentally investigated for wideband signals.

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“…An example of microfluidic cooling methods for GaN was investigated in [4] which showed that optimum flow rates can significantly improve GaN output power. A more conventional approach to thermal management was taken in [5] which mounted the GaN amplifiers on copper tungsten (CuW) heat spreaders in a hybrid module for satellite communication systems. This prior work demonstrates the importance of the electrical packaging and thermal design of GaN amplifiers.…”

Section: Introductionmentioning

confidence: 99%

Balancing Thermal and Electrical Packaging Requirements for GaN Microwave and Millimeter-Wave High Power Amplifier Modules

Sturdivant¹,

Bogdon²,

Chong³

2017

JECTC

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A method for balancing thermal and electrical packaging requirements for gallium nitride (GaN) high power amplifier (HPA) modules is presented. The goal is to find a design approach that minimizes the junction temperature of the GaN so that it is reliable and has interconnects that meet electrical performance requirements. One benefit of GaN is that it can simultaneously achieve high power density and operate at microwave and millimeter-wave frequencies. However, the power density can be so high that the necessary thermal solutions can have negative impact on electrical performance. This is especially a concern for the electrical interconnects required for the input/ output ports on high power amplifier devices. This is because the signal interconnects must operate at GHz frequencies, which means that special care must be taken to avoid problems such as undesired signal coupling and ground path inductance. Therefore, this work focuses on GaN packaging and its integration into a module. The results show that an optimum thickness for the GaN heat spreader exits for thermal performance but the electrical design is impacted negatively if the optimum thermal design is chosen. Therefore, a balanced design is chosen which meets overall system level requirements.

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A Linear GaN High Power Amplifier MMIC for <roman>Ka</roman>-Band Satellite Communications

Cited by 42 publications

References 5 publications

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review

Distortion mitigation for 100 and 250 MHz discrete supply modulation of a three-stage K-band MMIC PA

Balancing Thermal and Electrical Packaging Requirements for GaN Microwave and Millimeter-Wave High Power Amplifier Modules

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