A linearized power amplifier MMIC for 3.5 V battery operated wide-band CDMA handsets

Hau, Gary; Nishimura, T.B.; Iwata, N.

doi:10.1109/mwsym.2000.862260

Cited by 9 publications

(2 citation statements)

References 7 publications

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“…In order to realize power amplifiers having both characteristics, several schemes have been proposed such as bias controls by external circuits [1]- [4], switched circuit configurations [5]- [7] and combined configuration of class AB and class C amplifiers [8]. However, it is difficult for driver amplifiers to adopt those proposed schemes because of their limited circuit scale and size.…”

Section: Introductionmentioning

confidence: 99%

Low Quiescent Current SiGe HBT Driver Amplifier Having P-MOSFET Current Mirror Type Self Bias Control Circuit

Shinjo

Mori

Joba

et al. 2001

2001 31st European Microwave Conference

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An L-band low quiescent current and low distortion SiGe HBT driver amplifier having a self base bias control circuit is described. Since the size of this circuit is small and it does not need external control circuit, it is easy to integrate with the driver amplifier on single chip. According to the output power level, the self base bias control circuit, which is the combination of a P-MOSFET current mirror and a conventional constant base voltage circuit, automatically controls the base voltage and allows low quiescent current at low output power level and low distortion at high output power level. The simulated result shows that the proposed driver amplifier realized P1dB improvement of3.0dB compared with the conventional constant base voltage driver amplifier under the same quiescent current condition. The fabricated amplifier achieved P1dB of 14.9dBm with quiescent current of 15.3mA.

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Section: Introductionmentioning

confidence: 99%

Low Quiescent Current SiGe HBT Driver Amplifier Having P-MOSFET Current Mirror Type Self Bias Control Circuit

Shinjo

Mori

Joba

et al. 2001

2001 31st European Microwave Conference

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show abstract

“…[26][27][28][29][30] On a final step a 3G power amplifier has been designed in order to check if its behaviour is the same as in GSM. From the characteristics output power vs. control power of the…”

mentioning

confidence: 99%

Mixed RF Output Power Control for Low Power Transmitters in Mobile Cellular Terminals

Gárate¹,

Diego

Perea³

2006

2006 IEEE International Symposium on Industrial Electronics

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This paper proposes a more precise way of raReference diofrequency output power control and sensing for mobile base supplyI signal station transmitters without increasing the complexity of the AGC of heir power amplifier in order to overcome the design PDC adjustment problems and the production ones. The solution Transducer presented is based on measuring both the output power RF and It the current consumption of the PA. The solution has been tested on commercial GSM triple-band fixed cellular terminals PA and prototypes of 3G power amplifiers. PRF

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High efficiency, wide dynamic range variable gain and power amplifier MMICs for wideband CDMA handsets

Hau

Nishimura

Iwata

2001

IEEE Microw. Wireless Compon. Lett.

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A linearized power amplifier MMIC for 3.5 V battery operated wide-band CDMA handsets

Cited by 9 publications

References 7 publications

Low Quiescent Current SiGe HBT Driver Amplifier Having P-MOSFET Current Mirror Type Self Bias Control Circuit

Low Quiescent Current SiGe HBT Driver Amplifier Having P-MOSFET Current Mirror Type Self Bias Control Circuit

Mixed RF Output Power Control for Low Power Transmitters in Mobile Cellular Terminals

High efficiency, wide dynamic range variable gain and power amplifier MMICs for wideband CDMA handsets

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