COMMUNICATION
(1 of 8)deployed in the form of van der Waals (vdW) heterostructures that enable fascinating coupled properties from stacked individual layers of 2D sheets which can be exploited in several applications, [2,6,7] including tunneling transistors, [8] quantum hall systems, [9] electrochemical hydrogen evolution reaction, [10] optoelectronics, [4,11] and electronics. [3,12] The p-n junctions are the building blocks of the semiconductor industry, in which the p-n junction heterostructures made from ultrathin materials are of great interest in specialized electronics, optoelectronics, and photonics due to their intriguing coupled properties of the different crystals. [5][6][7]13] Several methods for exfoliation and/or deposition exist such as chemical vapor deposition (CVD), [7] pulsed laser deposition (PLD), [14] molecular beam epitaxy (MBE), [15] pick-and-lift vdW technique, [16] and mechanical exfoliation. [17] These conventional approaches are time consuming and require complicated fabrication processes, [18] yet resulting in devices with small effective areas. [19] Liquid metals are emerging materials which can be used in microfluidics components, [20] sensors, [21] electrodes, [22] phototransistors, [23] flexible and stretchable devices, [24] disease treatment, [22] biomedical field, [22] and in synthesis of low-dimensional materials. [25] Liquid metals have been shown to form a naturally occurring atomically thin layer of oxide at their interface with air, [26][27][28][29] and using liquid metal as a reaction solvent can give access to a sizable portion of oxide elements including oxides which are intrinsically nonlayered crystals. [26] The exfoliated oxides can be converted to sulfides and phosphates. [30] Combination of these atomically thin layers should provide a vast number of vdW heterostructures that are yet to be explored.In this work, atomically thin oxide skin of low melting point liquid metals of tin and indium including p-type tin oxide (SnO) [27] and n-type indium oxide (In 2 O 3 ) [31] are stacked to produce large-area heterostructures with a high degree of homogeneity. Indeed, the p-n vdW heterojunctions feature current rectification properties with exceptionally fast photoresponse times and high sensitivity for UV light. The demonstrated liquid metal synthesis framework offers the possibility of synthesizing and exploring a range of tailored heterostructures for applications in next-generation optoelectronic and photodetection devices.