A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

Veerappan, Chockalingam; Charbon, Edoardo

doi:10.1109/ted.2015.2475355

Cited by 66 publications

(41 citation statements)

References 33 publications

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“…A maximum PDP of 10.5% (pixel A) and 26.7% (pixel B) is reached at 520nm at the same excess bias of 3.3V, while the PDP nonuniformity is better than 1.4% (pixel A) and 3.2% (pixel B) at RT. Lower PDP compared to the previous work based on p-i-n SPAD [25] is caused by the border effect [27]. The border effect is more significant when the active diameter is smaller than 5µm, while the drawn active diameters for pixel A and B are 2.8µm and 3.88 µm, respectively.…”

Section: Resultsmentioning

confidence: 62%

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

Morimoto

Ardelean

et al. 2020

Optica

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280

159

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We present the first 1Mpixel SPAD camera ever reported. The camera features 3.8ns time gating and 24kfps frame rate; it was fabricated in 180nm CIS technology. Two pixels have been designed with a pitch of 9.4µm in 7T and 5.75T configurations, respectively, achieving a maximum fill factor of 13.4%. The maximum PDP is 27%, median DCR 2.0cps, variation in gating length 120ps, position skew 410ps, and rise/fall time <550ps, all FWHM at 3.3V of excess bias. The sensor was used to capture 2D/3D scenes over 2m with an LSB of 5.4mm and a precision better than 7.8mm. Extended dynamic range is demonstrated in dual exposure operation mode. Spatially overlapped multi-object detection is experimentally demonstrated in single-photon time-gated ToF for the first time.

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Section: Resultsmentioning

confidence: 62%

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

Morimoto

Ardelean

et al. 2020

Optica

Self Cite

280

159

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“…2(a). When compared to the previous implementation, the timing jitter increased from 100.8 ps [22] to the current 123 ps. A cascode transistor in series increases the output resistance and could increase the timing jitter due to a slower rising edge.…”

Section: Cmos High-performance Spad Arraymentioning

confidence: 76%

“…The SPAD sensor is based on a previous low noise SPAD design [22], implemented in a 180 nm CMOS technology. The impinging photon flux i translates into efficiency PD is equal to n cascode trans bias V EX , ove both the quen SPAD fires, t Figure 3 shows PDP measurements, with the peak PDP increased by 10% compared to the previous design [22]. The PDP measurement setup is illustrated in Fig.…”

Section: Cmos High-performance Spad Arraymentioning

confidence: 99%

Dynamic range extension for photon counting arrays

Antolović¹,

Bruschini²,

Charbon³

2018

Opt. Express

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Confocal microscopes use photomultiplier tubes and hybrid detectors due to their large dynamic range, which typically exceeds the one of single-photon avalanche diodes (SPADs). The latter, due to their photon counting operation, are usually limited to an output count rate to 1/Tdead. In this paper, we present a thorough analysis, which can actually be applied to any photon counting detector, on how to extend the SPAD dynamic range by exploiting the nonlinear photon response at high count rates and for different recharge mechanisms. We applied passive, active event-driven and clock-driven (i.e. clocked, following quanta image sensor response) recharge directly to the SPADs. The photon response, photon count standard deviation, signal-to-noise ratio and dynamic range were measured and compared to models. Measurements were performed with a CMOS SPAD array targeted for image scanning microscopy, featuring best-in-class 11 V excess bias, 55% peak photon detection probability at 520 nm and>40% from 440 to 640 nm. The array features an extremely low median dark count rate below 0.05 cps/μm at 9 V of excess bias and 0°C. We show that active event-driven recharge provides ×75 dynamic range extension and offers novel ways for high dynamic range imaging. When compared to the clock-driven recharge and the quanta image sensor approach, the dynamic range is extended by a factor of ×12.7-26.4. Additionally, for the first time, we evaluate the influence of clock-driven recharge on the SPAD afterpulsing.

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“…They also proposed a new SPAD device in 2016, which uses a vertical PIN structure. It can achieve a dark counting rate of 1.5cps/μm² under an excess bias of 11 V, and the PDP reaches 40% in the range of 460 nm∼600 nm [8]. References [7], [8] designed high-performance SPAD devices based on buried structures.…”

Section: Introductionmentioning

confidence: 99%

Design and Measurement of Ring-Gate Single Photon Avalanche Diode with Low Dark Count Rate

et al. 2020

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Single photon avalanche diodes (SPAD) based on avalanche effect have been widely used in the detection of extremely weak light signals. Conventional SPAD devices manufactured with silicon-based CMOS technology have a high dark count rate (DCR), making it difficult to accurately detect single photon signals. This paper proposes a low dark count rate ring-gate SPAD (RG-SPAD) to solve above problems, and compares RG-SPAD with conventional SPAD (C-SPAD) and conventional dummy-gate SPAD (CDG-SPAD). Slivaco-Technology Computer Aided Design (TCAD) performs two-dimensional simulation of the device to verify the basic principles of SPAD. Three types of SPAD device are manufactured by standard BCD process. The passive quenching circuit is built to obtain the DCR of SPAD devices. The avalanche breakdown voltages of C-SPAD, CDG-SPAD and RG-SPAD are 11.55 V, 11.85 V and 11.4 V respectively. In order to test the dark count rate of SPAD devices, an over-bias voltage of 1 V was applied to three types of SPAD device under the same size condition (temperature: 22°C). The DCR of RG-SPAD (186 Hz) with ring-gate structure is significantly lower than CDG-SPAD (378 Hz) with conventional dummy-gate structure and C-SPAD (498 Hz) with conventional structure. When the room temperature dropped to 18°C, RG-SPAD still maintained the lowest DCR (148 Hz) among three types of device structure.

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A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

Cited by 66 publications

References 33 publications

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

Megapixel time-gated SPAD image sensor for 2D and 3D imaging applications

Dynamic range extension for photon counting arrays

Design and Measurement of Ring-Gate Single Photon Avalanche Diode with Low Dark Count Rate

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