A Low Distortion and Low Dissipation Power Amplifier with Gate Bias Control Circuit for Digital/Analog Dual-Mode Cellular Phones

Maeng, Sung-Jae; Lee, Changseok; Youn, Kwang-Jun; Kim, Hae-Cheon; Mun, Jae‐Kyoung; Lee, Jaejin; Pyun, Kwang Eui

doi:10.4218/etrij.97.0197.0021

Cited by 2 publications

(2 citation statements)

References 5 publications

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“…For good linearity in the power amplifier design, it is well known that the core transistor has a normally low-and high-doped mixed channel layer and shows uniform transconductance characteristics with the gate voltage up to a biasing point [5]. For uniform transconductance, the high-doped layer should be located deeper than the low-doped one from the Schottky contact electrode [6][7][8][9].…”

Section: Design Of Switching Fetsmentioning

confidence: 99%

Design and fabrication of pHEMT MMIC switches for IEEE 802.11.a/b/g WLAN applications

Mun

Ahn

et al. 2005

Semicond. Sci. Technol.

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In this paper, we propose a channel structure for a promising switch pHEMT with excellent isolation characteristics based on the distribution of electric field intensity beneath the Schottky contact in the transistor. Using the proposed device channel structure, SPST and SPDT switches were designed and fabricated, applicable to 2.4 GHz and 5.8 GHz WLAN systems. We discuss the relationship between dc characteristics and switch parameters in this paper in detail. The developed SPST switch exhibits a low insertion loss of 0.26 dB and a high isolation of 34.3 dB with a control voltage of 0 V/−3 V at 5.8 GHz. The SPDT also shows a good performance of 0.85 dB insertion loss and 31.5 dB isolation under the same conditions. The measured power-handling capability at 2.4 GHz reveals that the SPDT has an output power of 27 dBm at the 1 dB compression point and a third-order intercept point of more than 46 dBm.

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Section: Design Of Switching Fetsmentioning

confidence: 99%

Design and fabrication of pHEMT MMIC switches for IEEE 802.11.a/b/g WLAN applications

Mun

Ahn

et al. 2005

Semicond. Sci. Technol.

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“…For wideband code-division multiple access (W-CDMA) systems, the efficiency of power amplifiers (PAs) operating at low output power levels has been an important issue in maximizing battery lifetime because most mobile handsets operate at output power levels below 10 dBm in urban environments [1], [2]. Moreover, PAs have recently been required to be insensitive to antenna mismatch because handsets do not include isolators due to their bulky size and cost.…”

Section: Introductionmentioning

confidence: 99%

A Highly Efficient GaAs HBT MMIC Balanced Power Amplifier for W-CDMA Handset Applications

Kim¹,

Kim²,

Kwon³

2009

ETRI J

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A highly efficient and compactly integrated balanced power amplifier (PA) for W‐CDMA handset applications is presented. To overcome the size limit of a typical balanced PA, a bulky input divider is integrated into a PA MMIC, and a complex output network is replaced with simple lumped‐element networks. For efficiency improvement at the low output power level, one of the two amplifiers in parallel is deactivated and the other is partially operated with corresponding load impedance optimization. The implemented PA shows excellent average current consumption of 34.5 mA in urban and 56.3 mA in suburban environments, while exhibiting very good load‐insensitivity under condition of VSWR=4:1.

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A Low Distortion and Low Dissipation Power Amplifier with Gate Bias Control Circuit for Digital/Analog Dual-Mode Cellular Phones

Cited by 2 publications

References 5 publications

Design and fabrication of pHEMT MMIC switches for IEEE 802.11.a/b/g WLAN applications

Design and fabrication of pHEMT MMIC switches for IEEE 802.11.a/b/g WLAN applications

A Highly Efficient GaAs HBT MMIC Balanced Power Amplifier for W-CDMA Handset Applications

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