Articles you may be interested inEffects of photowashing treatment on electrical properties of a GaAs metal-semiconductor field-effect transistor J.Effects of active-channel thickness on submicron GaAs metal semiconductor field-effect transistor characteristics J. Vac. Sci. Technol. B 16, 968 (1998); 10.1116/1.590054 Improved characteristics of GaAs metalsemiconductor fieldeffect transistors on Si substrates backcoated with SiO2 by metalorganic chemical vapor deposition

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For C D M N i W S dual-mode cellular phones, a power amplifier operating at 3.3V has been developed for the first time. The amplifier shows an output power of 31.5 dBm and 13 power-added efficiency of 61% for AMPS mode. The third order intermodulation and the fifth order one are measured to be -32 d13c and -45 dBc at an output power of 26 dBm for CDMA mode. These are good enough for dual-mode requirements.

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