A GaAs power amplifier for 3.3 V CDMA/AMPS dual-mode cellular phones

Maeng, Sung-Jae; Chun, Soung Soon; Lee, Jong‐Lam; Lee, Chang-Suck; Youn, Kwang-Jun; Park, Hyung-Moo

doi:10.1109/22.475643

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Cited by 15 publications

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Single‐voltage‐supply operation of Ga_0.51In_0.49P/AlGaAS/IN_0.15Ga_0.85As PHEMTS with high‐power density

Pan

2003

Micro & Optical Tech Letters

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A Ga0.51In0.49P/AlGaAs/In0.15Ga0.85As PHEMT with the highest power density among all single‐voltage‐supply operated devices, to our knowledge, was demonstrated for the first time. Operating at 1.8‐GHz under class‐A bias conditions, this FET shows 18.84‐dBm (382.8 mW/mm) saturated power and 17.25‐dBm (265.4 mW/mm) P1dB when the drain voltage is 3.6 V. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 196–199, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11167

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