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The dc and RF characteristics of Ga 0 49 In 0 51 P-In 0 15 Ga 0 85 As enhancement-mode pseudomorphic HEMTs (pHEMTs) are reported for the first time. The transistor has a gate length of 0.8 m and a gate width of 200 m. It is found that the device can be operated with gate voltage up to 1.6 V, which corresponds to a high drain-source current ( DS ) of 340 mA/mm when the drain-source voltage ( DS ) is 4.0 V. The measured maximum transconductance, current gain cut-off frequency, and maximum oscillation frequency are 255.2 mS/mm, 20.6 GHz, and 40 GHz, respectively. When this device is operated at 1.9 GHz under class-AB bias condition, a 14.7-dBm (148.6 mW/mm) saturated power with a power-added efficiency of 50% is achieved when the drain voltage is 3.5 V. The measured min is 0.74 dB under DS = 15 mA and DS = 2 V. Index Terms-Enhancement mode, GaInP, pseudomorphic HEMT (pHEMT), single-positive-voltage supply.

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