DC and RF characteristics of E-mode Ga/sub 0.51/In/sub 0.49/P-In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs

Tu, Hsing-Yuan; Chou, Tao-Hsuan; Lin, Yan-Ting; Chiu, Hsien‐Chin; Chen, Ping‐Yu; Wu, Wen-Chung; Lu, Shey‐Shi

doi:10.1109/led.2003.809045

Cited by 12 publications

(2 citation statements)

References 9 publications

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“…2 shows that the gate voltage swing (defined by a 10% reduction of the peak g m ) is approximately 0.5 V at V DS = 2 V for the MOS-PHEMT, which is comparable to the voltage swing of traditional E-mode InGaP/InGaAs PHEMTs. 1,16 The band bending in the Schottky layer is influenced at higher V GS , and the conduction band has an opportunity to be lower than the Fermi level, resulting in an increased g m again. Figure 3a shows a comparison of the subthreshold characteristics measured at V DS = 0.1 V and 1.1 V. The subthreshold swing (SS) of the MOS-PHEMT (63.5 to 72.5 mV/dec) is better than that (76.8 to 91.8 mV/dec) of the referenced one.…”

Section: Methodsmentioning

confidence: 99%

Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess

Lee

Chen

2012

ECS Solid State Letters

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This paper demonstrates an enhancement-mode InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (PHEMT) with a liquid-phase oxidized GaAs gate without a gate recess. Without a gate recess, the gate insulator is obtained directly by oxidizing the GaAs capping layer in the LPO growth solution, and fully planar surface is achieved around the active region. The proposed device shows a maximum transconductance of 141 mS/mm at V DS = 2 V and a maximum drain current density of 145 mA/mm at V GS = 2 V and V DS = 2 V. It also exhibits lower leakage current, improved subthreshold swing, suppressed low-frequency noise, and enhanced microwave performance than those of the referenced PHEMT.The advantages of using enhancement-mode (E-mode) pseudomorphic high-electron-mobility transistors (PHEMTs) as power devices for single supply operations have been recognized for some time. These advantages can facilitate circuit design and construction and render them less complex. They can also improve dc power consumption, efficiency, and operation time; 1 this has led to interest in applications for cellular phones. The buried gate approach 2,3 or double recess process 4,5 are commonly used techniques for high-performance E-mode PHEMTs. However, the gate-recess process creates more surface states that induce a gate leakage issue and generate parasitic capacitances that degrade device performance. Moreover, the Schottky barrier heights may still suffer from gate leakage issue. Suitable oxidation or passivation can satisfy dangling bonds, which reduce surface recombination centers and suppress carrier trapping within the surface states. In other words, using an oxide film to form a metaloxide-semiconductor (MOS) structure for metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) fabrication could improve the microwave characteristics and lowfrequency noise associated with the surface state and lattice scattering.Over the past years, a simple and selective liquid phase oxidation (LPO) on GaAs operated at low temperature (30-70 • C) has been proposed and investigated. 6 Previous works have reported the preliminary study of the dc performance, the pulse transient characteristics, 7 and RF performance 8 of the depletion-mode (Dmode) InGaP/InGaAs MOS-PHEMT. The pulse transient measurement shows much less impact of the surface trap effects for the D-mode MOS-PHEMT. However, the literature focuses less on the low-frequency noise and microwave characteristics of the E-mode InGaP/InGaAs MOS-PHEMT. 9 Low-frequency noise measurement is a commonly used method to investigate MOS interface properties of MOS-PHEMTs 10,11 and surface treatment properties of PHEMTs. 12,13 This paper presents a discussion on the low-frequency noise and microwave performance of an E-mode InGaP/InGaAs MOS-PHEMT with an oxidized GaAs gate without a gate recess to further understand the role of the gate insulator. Without a gate recess, the gate insulator is obtained directly by oxidizing the GaAs capping layer...

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Section: Methodsmentioning

confidence: 99%

Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess

Lee

Chen

2012

ECS Solid State Letters

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“…Besides, with this technology, dc level shifting stages can be eliminated between successive amplifier gain stages, thus reducing the number of transistors in the circuit [3]. Recently, the use of InGaP instead of AlGaAs in E-mode pHEMT structures has been reported to overcome DX centre and uniformity problems for 3 inch GaAs substrate [4][5][6]. In order to reduce chip size and processing costs, switch monolithic microwave integrated circuits (MMICs) integrated with RF modules is a compact and convenient topology for WLAN applications.…”

Section: Introductionmentioning

confidence: 99%

High uniformity enhancement- and depletion-mode InGaP/InGaAs pHEMTs using a selective succinic acid gate recess process

Chiu

Cheng

Shih

2005

Semicond. Sci. Technol.

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High uniformity enhancement-mode (E-mode) and depletion-mode (D-mode) InGaP/InGaAs pseudomorphic high electron mobility transistors (pHEMTs) have been developed on 6 inch GaAs substrate using a selective succinic acid gate recess process. The 0.5 µm long gate fingers of E-mode and D-mode pHEMTs are deposited simultaneously in this process simplification. The InGaP/InGaAs E-mode pHEMT exhibits a maximum drain-to-source current (I ds ) of 460 mA mm −1 , and a maximum transconductance (g m ) of 430 mS mm −1 . At 5.2 GHz operation, 216 mW mm −1 power density, 40% power-added efficiency and a 0.81 dB minimum noise figure (NF min ) are also achieved for the E-mode device. In this study, D-mode pHEMTs are applied for a switch monolithic microwave integrated circuit which provides an insertion loss of −1.8 dB and isolation of −9.2 dB under 28 dBm input power (P in ) and 5.5 GHz operation. From these measured results, this uniform E/D-mode InGaP/InGaAs pHEMT technology exhibits a high potential for WLAN applications.

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Microwave complementary doped-channel field-effect transistors

Tsai¹,

Chiu²,

Lour³

et al. 2009

Superlattices and Microstructures

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DC and RF characteristics of E-mode Ga/sub 0.51/In/sub 0.49/P-In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs

Cited by 12 publications

References 9 publications

Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess

Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess

High uniformity enhancement- and depletion-mode InGaP/InGaAs pHEMTs using a selective succinic acid gate recess process

Microwave complementary doped-channel field-effect transistors

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