Investigations for InAs/GaAs multilayered quantum-dot structure treated by high energy proton irradiation

Tang, Shiang‐Feng; Hsieh, H. H.; Tu, Hsing-Yuan; You, Teng-Hua; Lin, Shih‐Yen; Wang, Lichun; Chiang, Cheng-Der

doi:10.1016/j.tsf.2010.05.009

Cited by 8 publications

(3 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Meanwhile, the results of high-energy proton irradiation showed that the dark current increases as the proton fluence increases, but decreases with increasing proton energy. Lower energy proton irradiation with higher fluences will induce more damage to the electrical properties of the device [7]. And recoverable degradation of InGaN LED was found with 3 MeV proton irradiation and various fluences (10 11 , 10 13 , and 10 14 p cm −2 ).…”

Section: Introductionmentioning

confidence: 92%

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Cao

Tao³

et al. 2023

Phys. Scr.

View full text Add to dashboard Cite

The paper reports on the degradation of InGaN/GaN Blue LED submitted to proton irradiation at 80 MeV and various fluences (4×1013 p/cm2 and 1×1014 p/cm2). After irradiation, we found a decrease in light output power and the external quantum efficiency with fluence. Photoluminescence (PL) measurements exhibited that the peak position at 400, 447 and 568 nm remained unchanged, only the peak intensity decreased. The intensity of the blue emission reduced by 75%, indicating that the active region degraded seriously; the intensity from InxGa1-xN (x=0.11) reduced more than two times in comparison with the blue emission, implying that proton irradiation affected InxGa1-xN more seriously than InGaN/GaN MQWs. The degradation of LED is ascribed to the increase in the defect-related Shockley–Read–Hall recombination after 80 MeV proton irradiation with higher fluence.

show abstract

Section: Introductionmentioning

confidence: 92%

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Cao

Tao³

et al. 2023

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…Little is known about radiation hardness of InP based passive devices compared to bulk (LiNbO3) devices [4]. Literature suggests that MQW based devices perform better than bulk devices under irradiation [5][6][7][8].…”

Section: Irradiation Testsmentioning

confidence: 99%

Irradiation tests on InP based Mach Zehnder modulator

Gajanana¹,

Beuzekom²,

Smit³

et al. 2013

J. Inst.

View full text Add to dashboard Cite

Particle detectors in High Energy Physics experiments contain various types of mixedsignal integrated circuits and demand data rates of multiple Gigabits per second per chip and several Terabits per second for the whole detector. Optical transmission by external modulation of a continuous wave laser is a possible solution to solve the problem of high data rates. The detectors have to operate in a high radiation environment and particles passing through the circuits alter the properties of the circuits giving rise to performance issues. In this paper, we investigate the radiation hardness performance of Indium Phosphide (InP) based Mach-Zehnder modulators (MZM). The modulator circuit has been irradiated with a 24 GeV/c proton beam at CERN up to various fluences. The irradiated samples have been characterized and compared against measurements of non-irradiated devices. Also, a design of an optical integrated circuit using the Generic Integration philosophy is presented.

show abstract

“…InGaAs materials and devices have been of great interest due to the advantages of high stability and low cooling requirements in the space remote sensing area. To ensure the reliable application of InGaAs detectors in the aerospace, many works have been done to research the effect of space irradiation on the detector [3][4][5][6][7]. Some works have studied the irradiation such as proton, electron and γ-ray radiation.…”

Section: Introductionmentioning

confidence: 99%

The influence of sunlight irradiation on the characteristics of InGaAs detectors

Shao

Zhu

et al. 2014

SPIE Proceedings

View full text Add to dashboard Cite

InGaAs ternary compound is suitable for detector applications in the shortwave infrared (SWIR) band. Due to the advantages of good stability, low cooling requirements and high detectivity, InGaAs detectors have been applied widely in the space remote sensing area. However, InGaAs detectors would be affected by strong sunlight direct irradiation in space application. In this paper, a mesa-type InGaAs detector with large sensitive area of diameter 5mm was designed based on InP/In 0.53 Ga 0.47 As/InP epitaxial material, which is lattice-matched to InP substrate. The InGaAs detectors were fabricated by ICP etching, and packaged in a Kovar shell. The relative spectral response is in the range of 0.9μm to 1.7μm. The mechanism of the sunlight direct irradiation on InGaAs detector performance was studied. The sunlight were focalized by lens and irradiated directly on the detector. A piece of epitaxial material was investigated at the same time which was cleaved from a 2 inch wafer, same to the detector material. The real time testing was taken out to observe the output signal of the detector. After the irradiation experiment, the I-V curves and the relative response were tested immediately. The dark current of the detector increased temporarily, but come back to the original level after 24 hours. The response spectrum was nearly not affected. The XRD testing of the epitaxial material sample was carried out before and after sunlight direct irradiation. The sunlight irradiation causes thermal stress degradation. The thermal electrons were produced by the absorption of a great deal of visible light, leading to local enhancement of temperature and the lattice degeneration of the material.

show abstract

Investigations for InAs/GaAs multilayered quantum-dot structure treated by high energy proton irradiation

Cited by 8 publications

References 11 publications

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Effects of high-dose 80 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes

Irradiation tests on InP based Mach Zehnder modulator

The influence of sunlight irradiation on the characteristics of InGaAs detectors

Contact Info

Product

Resources

About