High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology

Chiu, Hsien‐Chin; Yang, Chih-Wei; Chen, Chao-Hung; Lin, Che-Kai; Fu, Jianqin; Tu, Hsing-Yuan; Tang, Shiang‐Feng

doi:10.1016/j.microrel.2010.02.022

Cited by 9 publications

(4 citation statements)

References 8 publications

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“…The sheet resistance is 155 / and the corresponding carrier concentration and mobility are 2.4 × 10 12 cm −2 and ∼13 900 cm 2 V s −1 at room temperature. These figures are 30-100% better than similar GaAs and InP based structures reported in [12] and [13]. Breakdown voltages up to 14 V have also been reported on similar structures in our previous work [15].…”

Section: Device Structure and Fabrication Processsupporting

confidence: 69%

“…In this work, strained channel In 0.7 Ga 0.3 As-In 0.52 Al 0.48 As pHEMTs were fabricated by implementing a Pd/Ti/Au gate metallization scheme with conventional thermal evaporation. By combining the Pd-gate diffusion effect and the benefit of highly strained In 0.7 Ga 0.3 As channel structure, the device performance has shown over 50% enhancement over those reported in [12,13]. The interrelations between Pd metal thickness, heat treatment time and temperature are explored to evaluate the thermal stability of these Pd-gate devices.…”

Section: Iii-v Compound Semiconductors Have Long Been Recognizedmentioning

confidence: 99%

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Thermally stable In_0.7Ga_0.3As/In_0.52Al_0.48As pHEMTs using thermally evaporated palladium gate metallization

Ian¹,

Zawawi²,

Missous³

2014

Semicond. Sci. Technol.

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This work described the fabrication and performances of strained channel In 0.52 Al 0.47 As/In 0.7 Ga 0.3 As/InP pHEMTs with thermally evaporated Pd/Ti/Au gate metallization. The electrical characteristics of these Pd-gate devices are studied to investigate the effects of changing the Pd metal thickness, annealing temperature and annealing time. Following annealing at 200 • C for 35 min, a 10 nm Pd-gate device displays a V TH of −0.25 V, which is significantly smaller compared to those with Ti/Au gate schemes showing V TH = −0.75 V. A 1 um gate length device exhibits an improved Gm of 580 mS mm −1 (from 500 mS mm −1 ), a high I DSmax of 400 mA mm −1 (from 330 mA mm −1 ) and good f T and f max of 24.5 and 49 GHz commensurate with the 1 μm gate length. All these enhancements are attributed to the controllable gate sinking of Pd. The device shows no significant degradation even after annealing at 230 • C for more than 5 h, which implies that the reliability of these Pd-gate structures is excellent.

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Section: Device Structure and Fabrication Processsupporting

confidence: 69%

Section: Iii-v Compound Semiconductors Have Long Been Recognizedmentioning

confidence: 99%

Thermally stable In_0.7Ga_0.3As/In_0.52Al_0.48As pHEMTs using thermally evaporated palladium gate metallization

Ian¹,

Zawawi²,

Missous³

2014

Semicond. Sci. Technol.

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“…14,15) Recently, Pt/InAlAs Schottky control was reported. 16,17) Pt gate could be able to adjust the threshold voltage with appropriate anneal procedure causing to interface of alloy progressed (buried-Pt gate technology) and achieve high transconductance and large cut-off frequency. It was also reported that Pd and n-InAlAs of Schottky diode can lead to good Schottky characterization as well.…”

Section: Introductionmentioning

confidence: 99%

“…It was also reported that Pd and n-InAlAs of Schottky diode can lead to good Schottky characterization as well. 17) Compared with platinum, palladium has advantages such as low cost and lower melting point which make easier to be evaporated by electron-beam evaporator. However, there have been only a few reports on Pd/InAlAs Schottky contact and almost no report on HEMT with Schottky material.…”

Section: Introductionmentioning

confidence: 99%

Thermal Stability of Pd Gate in Pseudomorphic InGaAs Heterostructures

Ishikura

Cui

Matsuda

et al. 2011

Jpn. J. Appl. Phys.

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The characterization of InAs is known to have high spin–orbit interaction as well as high electron velocity, high sheet carrier density. In order to realize Datta–Das type spin field effect transistor (FET), it becomes crucial to develop thermally stable Schottky gate metal process for achieving a non-alloyed ohmic contact with ferromagnetic electrode after gate formation process. We have investigated Pd-gate deposited on In0.81Ga0.19As-based pseudomorphic heterostructures structure in order to check Pd as a good candidate for thermally stable Schottky gate by verifying good Schottky characteristics while maintaining good transport properties during heat treatment. Characteristics of Pd gate on InAlAs barrier layer was found to have Schottky barrier height of around 0.68 and less than 1.10 of ideality factor. Moreover Pd gate was found to endure higher heat treatment than Ti/Pt/Au gate or Ti/Au gate.

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Modulation‐Doped Field‐Effect Transistors (MODFET)

Zhu

Ferreyra

Morkoç̌

2015

Wiley Encyclopedia of Electrical and Electronics Engineering

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Conventional modulation‐doped field‐effect transistors (MODFETs) with unprecedented performance, e.g., a power gain of 15 dB at 190–235 GHz and a noise level of 1.2 dB with 7.2‐dB gain in the 90‐GHz range, have been demonstrated. Passivation process is of fundamental importance in the stability, good performance, and extension of device operative lifetime. We discuss strategies used to passivate the surface of GaAs and related compounds and GaN in the context of FETs. Recent research on the enhancement‐mode PMODFET (E‐PMODFET) variety for applications in high‐speed and low‐power digital circuits, and power amplifiers with single power supply is described. Reliability of MOSFET based on GaAs is reviewed to some extent. Scalability issues as well as progress in FinFET‐based on InGaAs channel are summarized. Also to be noted is that III–V compound semiconductors as alternative to Si as the channel material to improve the performance of metal‐oxide–semiconductor field‐effect transistors (MOSFETs) on Si platforms is a very attractive option for the next‐generation high‐speed integrated circuits but faces serious challenges because of the lack of a high‐quality and natural insulator. III‐V Nitride‐based HFETs showed tremendous performance in both high‐power RF and power‐switching applications. AlGaN/GaN based high power HFETs on SiC substrate with 60 nm gate lengths have achieved maximum oscillation frequency of 300 GHz. On‐resistance of 1.1∼1.2 Ω·mm as well as drain current of ∼0.9 A/mm was also achieved. For HFET devices operated in Class AB mode on GaN semi‐insulating substrates, a continuous wave power density of 9.4 W/mm was obtained with an associated gain of 11.6 dB and a power added efficiency of 40% at 10 GHz. III‐Nitride devices for power switching application has achieved near theoretical limit for vertical devices based GaN native substrates, and breakdown voltage as high as 1200 V and on resistance as low as 9 mΩ‐cm2 for lateral HFET devices on low‐cost silicon substrates. For AlGaN/GaN HFETs on high‐resistivity silicon substrates, promising results were also demonstrated. Because of the much larger 2DEG density in lattice‐matched InAlN/GaN HFETs, drain current as high as 2 A/mm was demonstrated, and the highest current gain cutoff frequency of 370 GHz was also reported on 7.5‐nm‐thick In In0.17Al0.83N barrier HFETs. Despite the above‐mentioned encouraging achievements, the degradation mechanisms are still not clear, which requires further investigation. The advent of high‐quality SiGe layers on Si substrates has paved the way for the exploration and exploitation of heterostructure devices in a Si environment. MODFETs based on the Si/SiGe have been achieved with extraordinary p ‐channel performance. With 0.25‐μm gate lengths, the current gain cutoff frequency is about 40 GHz. When the gate length was reduced to 0.1 μm, the current gain cutoff frequency increased to about 70 GHz.

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High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology

Cited by 9 publications

References 8 publications

Thermally stable In_0.7Ga_0.3As/In_0.52Al_0.48As pHEMTs using thermally evaporated palladium gate metallization

Thermally stable In_0.7Ga_0.3As/In_0.52Al_0.48As pHEMTs using thermally evaporated palladium gate metallization

Thermal Stability of Pd Gate in Pseudomorphic InGaAs Heterostructures

Modulation‐Doped Field‐Effect Transistors (MODFET)

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High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology

Cited by 9 publications

References 8 publications

Thermally stable In0.7Ga0.3As/In0.52Al0.48As pHEMTs using thermally evaporated palladium gate metallization

Thermally stable In0.7Ga0.3As/In0.52Al0.48As pHEMTs using thermally evaporated palladium gate metallization

Thermal Stability of Pd Gate in Pseudomorphic InGaAs Heterostructures

Modulation‐Doped Field‐Effect Transistors (MODFET)

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Thermally stable In_0.7Ga_0.3As/In_0.52Al_0.48As pHEMTs using thermally evaporated palladium gate metallization

Thermally stable In_0.7Ga_0.3As/In_0.52Al_0.48As pHEMTs using thermally evaporated palladium gate metallization