A low energy electron beam annealing system: Design, capability and use

Abstract

The paper discusses how an experimental low energy electron‐beam annealing system may be constructed from SEM components for use in semiconductor research. The system is essentially very simple in design but is adequate for selective transient annealing of areas of bulk materials and features within specially fabricated test integrated circuits. Some experimental results obtained with such a system are detailed to illustrate its use and capabilities.

Silicide Formation on Polycrystalline Silicon by Direct Metal Implantation

“…To remove the implant damage to the layer while minimizing metal redistribution, transient annealing (using a scanned E-beam system) was used (10). Each standard annealing cycle lasted 20s, the final temperature of 950~ being reached after 10s.…”