Silicide Formation on Polycrystalline Silicon by Direct Metal Implantation

Kozicki, Michael; Robertson, John M.

doi:10.1149/1.2096763

Cited by 3 publications

(1 citation statement)

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“…In micromechanical applications the surfaces on which the interconnects are needed are often made of polysilicon (poly-Si) or amorphous silicon (a-Si) in order to achieve a better insulation between the individual interconnection lines. Investigations of silicide formation in poly-Si have been performed by Kozicki and Robertson [12]. The best value of sheet resistance obtained in that work was 0.75 −1 which corresponds to a resistivity of 15 µ cm at a layer thickness of 200 nm.…”

Section: Introductionmentioning

confidence: 96%

Cobalt disilicide interconnects for micromechanical devices

Teichert¹,

Bischoff²,

Hesse³

et al. 1996

J. Micromech. Microeng.

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A focused ion beam system working with ions has been used to produce interconnects by means of ion beam synthesis. The capability of maskless patterning of the focused ion beam, its large depth of focus and the possibility of a dynamic focus control allow the fabrication of interconnects in three-dimensional devices with this method. Investigations have been performed using polycrystalline, amorphous and single-crystalline silicon substrates. The influence of implantation dose has been studied, the electrical resistance and thermal stability of the interconnects has been measured. For room temperature implantation and annealing at for 1 h resistivities between 34 and have been obtained for the various substrate materials. The interconnects have been found to be thermally stable up to . In order to demonstrate this method interconnection lines have been fabricated on the sloped walls of deep anisotropically etched grooves .

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Section: Introductionmentioning

confidence: 96%