Silicides

Osburn, C. M.

doi:10.1016/b978-0-12-247690-7.50010-x

Cited by 15 publications

(1 citation statement)

References 210 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a result, a sound collection of books, book chapters, and review articles covering different aspects of silicide/germanide properties and applications are available to the reader. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] A very well-known use of silicides is as a contacting material in micro-electronic devices. Ever since the development of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) and the advent of the Si based CMOS technology, downscaling of these silicon based microelectronic devices resulted in a massive increase of their speed and complexity.…”

mentioning

confidence: 99%

Texture in thin film silicides and germanides: A review

Schutter

Keyser

Lavoie

et al. 2016

Applied Physics Reviews

View full text Add to dashboard Cite

mentioning

confidence: 99%

Texture in thin film silicides and germanides: A review

Schutter

Keyser

Lavoie

et al. 2016

Applied Physics Reviews

View full text Add to dashboard Cite

Contaminations and Impurities in DC Magnetron Sputtered WSix Films on SiO2

Sundahl

Irwin

Nanda

et al. 1995

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

In this study, dc magnetron sputtered WSix films are characterized with RBS, SIMS, and TEM techniques. The films are deposited in a Varian 3180 sputtering system with the conmag WSi target 91‐1209‐05. Contaminations emitting from the shutter and cavity shields in the deposition chamber are reduced with the application of particle getter (PG). RBS analysis shows the films to contain 1.1 at% Ar and 0.11 at% Mo impurities along with WSix and SiO2. SIMS mass spectra also reveal the presence of Mo in WSix layer. The Si to W ratio (Si/W) and at% Mo increase with target use. No significant changes in the Si/W are observed with annealing in the temperature regime 700 to 1000 °C. The sheet resistivity of the WSix films decreases with increasing RTA temperatures. The TEM and XRD results of as‐deposited samples show the films are amorphous and the annealed samples are polycrystalline with tetragonal WSi2 phase. The annealed samples show the presence of larger grains and increased precipitation of silicon within the film. The low sheet resistance (12.2 Ω/□), conductivity, stability, good uniformity, fine grains, and manageable stress for good adhesion makes WSix a promising gate electrode material for submicron CMOS technologies.

show abstract

Contact and Interconnect Technology

Ryan¹

1995

Fundamentals of Semiconductor Processing Technology

View full text Add to dashboard Cite

Silicides

Cited by 15 publications

References 210 publications

Texture in thin film silicides and germanides: A review

Texture in thin film silicides and germanides: A review

Contaminations and Impurities in DC Magnetron Sputtered WSix Films on SiO2

Contact and Interconnect Technology

Contact Info

Product

Resources

About