A low-frequency GaAs MESFET circuit model

Scheinberg, N.; Bayruns, R.; Goyal, R.

doi:10.1109/4.1029

Cited by 52 publications

(6 citation statements)

References 5 publications

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“…A CCURATE nonlinear modeling of FETs for microwave circuit design must also account for low-frequency dispersive phenomena of the electrical characteristics due to charge "trapping" and device self-heating [1]- [6]. These phenomena cause considerable deviations between static and dynamic (e.g., pulsed) measurements of the characteristics, or, if we think in terms of differential parameters, frequency dependent behavior of the trans-admittance and output impedance even at low frequencies (e.g., lower than 1 MHz).…”

Section: Introductionmentioning

confidence: 99%

Equivalent-voltage approach for modeling low-frequency dispersive effects in microwave FETs

Santarelli

Zucchelli

Paganelli

et al. 2002

IEEE Microw. Wireless Compon. Lett.

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Section: Introductionmentioning

confidence: 99%

Equivalent-voltage approach for modeling low-frequency dispersive effects in microwave FETs

Santarelli

Zucchelli

Paganelli

et al. 2002

IEEE Microw. Wireless Compon. Lett.

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“…[24][25][26][27] Golio et al 25 also observed a frequency dependent transconductance. However, they concluded that the transconductance dispersion is much smaller than the corresponding shift in the output conductance.…”

Section: Additional Effects and Limitationsmentioning

confidence: 99%

Spice Modeling of Compound Semiconductor Devices

Iñı́guez

Fjeldly

Shur

et al. 1998

Int. J. Hi. Spe. Ele. Syst.

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We review recent advances in the modeling of novel and advanced semiconductor devices, including state-of-the-art MESFET and HFETs, heterodimensional FETs, resonant tunneling devices, and wide-bandgap semiconductor transistors. We emphasize analytical, physics-based modeling incorporating the important effects present in modern day devices, including deep sub-micrometer devices. Such an approach is needed in order to accurately describe and predict both stationary and dynamic device behavior and to make the models suitable for implementation in advanced computer aided design tool including circuit simulators such as SPICE.Hence, a strong impetus exists for discussing these crucial aspects of advanced device modeling for circuit simulators and other computer aided design (CAD) tools. A better understanding of these issues may help speed the transfer of knowledge on new processes and devices and allow the circuit design houses access to the latest in device technology with minimal delay.The FET models considered here are mostly based on the unified modeling concept, where continuous analytical expressions for current voltage (I-V) and capacitance voltage (C-V) characteristics are used for all bias conditions, with no discontinuities in derivatives to any order. 1 ' 2 A brief review of this modeling strategy is presented in Sec. 2.Proven device concepts such as metal-semiconductor FETs (MESFETs) and heterostructure FETs (HFETs) are solidly entrenched in the high-speed/highfrequency electronics market, and in high-power/high-temperature applications. The race for improved performance is evident in the compound semiconductor device technology, with a drive towards reduced dimensions, new material combinations, and improved and novel device structures. In Sec. 3, we consider recent progress in the modeling of GaAs based MESFETs and HFETs that includes improved descriptions of transistor characteristics, thermal effects, gate leakage, and device capacitances. [3][4][5][6] Device scientists and engineers worldwide are engaged in developing novel device technologies intended to meet the even more stringent demands of the future, including those posed by new and special applications. As an example, we consider in Sec. 4 the modeling of heterodimensional devices, including two-dimensional (2D) MESFETs and 2D resonant tunneling diodes and transistors, which utilize electronic systems of different dimensionality. These devices demonstrate remarkable properties in terms of short-channel effects, intrinsic capacitances, power dissipation and versatility in logic circuits. As another example, we consider in Sec. 5 devices fabricated from wide-bandgap semiconductors such as SiC and GaN. These devices, which presently attract a great deal of attention, have unique properties needed for high-power/high-frequency/high-temperature applications.Many of the device models discussed here have been implemented in the circuit simulator AIM-Spice, 7 which runs on PCs and on other workstation platforms supporting the WindowsNT operating syst...

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“…Many efforts have been made by several research groups to take into account low-frequency dispersion both in look-up-table-based and equivalent-circuit models [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Beside dc and small-signal measurement data, many of these modeling approaches need pulsed I/V measurements during the identification phase for improved prediction accuracy.…”

Section: Introductionmentioning

confidence: 99%

Accurate modeling of electron device I/V characteristics through a simplified large-signal measurement setup

Raffo

Santarelli

Traverso

et al. 2005

Int J RF and Microwave Comp Aid Eng

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Low-frequency dispersive phenomena due to self-heating and/or "traps" (that is, surface-state densities and deep-level traps) cause important dynamic deviations in the I/V characteristics of III-V devices and they must be taken into account when an accurate large-signal dynamic model is needed. To this end, different low-frequency dispersive I/V models have been proposed by the research community and, quite often, a characterization based on pulsed I/V measurement systems has been suggested as the most appropriate for the identification of model parameters. Unfortunately, besides requiring special-purpose setups, pulsed characterization may suffer from some drawbacks, as discussed in this article. As an alternative, a simple large-signal measurement setup is presented here, which is based on low-frequency sinusoidal excitations and can be easily implemented by means of conventional general-purpose laboratory instrumentation. The proposed setup is successfully adopted in this article to identify the dispersive I/V characteristics of a GaAs PHEMT large-signal model providing excellent prediction of intermodulation distortion at Ka-band frequencies.

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A low-frequency GaAs MESFET circuit model

Cited by 52 publications

References 5 publications

Equivalent-voltage approach for modeling low-frequency dispersive effects in microwave FETs

Equivalent-voltage approach for modeling low-frequency dispersive effects in microwave FETs

Spice Modeling of Compound Semiconductor Devices

Accurate modeling of electron device I/V characteristics through a simplified large-signal measurement setup

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