A low miller capacitance VDMOS with shield gate and oxide trench

Ren, Min; Chen, Zhe; Niu, Bo; Cao, Xiaofeng; Li, Shuang; Li, Zehong; Zhang, Bo

doi:10.1109/inec.2016.7589361

Cited by 5 publications

(2 citation statements)

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“…First, C dep decreases with the expansion of the depletion region of the bulk region. Second, the grounded central implant region under the gate screens the gate-to-drain capacitive coupling [19] . CIMOSFET has low C RSS despite having shallow depletion regions in high V DS (Fig.…”

Section: Capacitance and Gate Charge Characteristicsmentioning

confidence: 99%

A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance

Yoon¹,

Kim²

2021

J. Semicond.

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A split gate MOSFET (SG-MOSFET) is widely known for reducing the reverse transfer capacitance (C RSS). In a 3.3 kV class, the SG-MOSFET does not provide reliable operation due to the high gate oxide electric field. In addition to the poor static performance, the SG-MOSFET has issues such as the punch through and drain-induced barrier lowering (DIBL) caused by the high gate oxide electric field. As such, a 3.3 kV 4H-SiC split gate MOSFET with a grounded central implant region (SG-CIMOSFET) is proposed to resolve these issues and for achieving a superior trade-off between the static and switching performance. The SG-CIMOSFET has a significantly low on-resistance (R ON) and maximum gate oxide field (E OX) due to the central implant region. A grounded central implant region significantly reduces the C RSS and gate drain charge (Q GD) by partially screening the gate-to-drain capacitive coupling. Compared to a planar MOSFET, the SG MOSFET, central implant MOSFET (CIMOSFET), the SG-CIMOSFET improve the R ON×Q GD by 83.7%, 72.4% and 44.5%, respectively. The results show that the device features not only the smallest switching energy loss but also the fastest switching time.

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Section: Capacitance and Gate Charge Characteristicsmentioning

confidence: 99%

A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance

Yoon¹,

Kim²

2021

J. Semicond.

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“…The PN junction formed between the P-base and N-drain is used to support high voltages by utilizing a lightly doped drift region. In this paper, based on VDMOS (Vertical-Diffused MOSFET) [11][12][13] and UMOS (U-shaped groove MOSFET) [14,15] structures, the novel VD-GCBFET (figure 1(a)) and U-GCBFET (figure 1(b)) structures are proposed and investigated for the first time by applying the base-gate short contact instead of the original base-source short contact. The simplified circuit diagram is equivalent to that the MOSFET in parallel with the composite BJT, as shown in figure 1(c).…”

Section: Device Structurementioning

confidence: 99%

Novel gate-controlled bipolar composite field effect transistor with large on-state current

Duan¹,

Sun²,

Dong³

et al. 2020

Semicond. Sci. Technol.

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Novel gate-controlled bipolar composite field effect transistors (GCBFET) based on vertical MOSFETs are proposed and investigated in this paper for the first time, named VD-GCBFET and U-GCBFET, respectively, which feature the base-gate short connection mode instead of the conventional base-source short connection mode. When the devices are turned on, the composite bipolar junction transistor (BJT) provides an additional holes injection path, which is conducive to obtaining larger forward on-state current. Two conductive paths provided by the composite BJT and MOS structure not only improve the integration degree, but also greatly increase the forward on-state current while the breakdown mechanism remains unchanged. The simulation results show that, with the same structural parameters, the proposed GCBFETs have the same breakdown voltage and much lower threshold voltage compared with the corresponding vertical MOSFETs. Meanwhile, the proposed GCBFETs gain much larger forward on-state current which is over two orders of magnitude higher than that of the corresponding vertical MOSFETs. Moreover, due to the introduction of extra holes by the composite BJT, the proposed GCBFET has similar slow switching speed as IGBT.

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