A Low-Power CMOS Bandgap Voltage Reference for Supply Voltages Down to 0.5 V

Ria, Andrea; Catania, Alessandro; Bruschi, P.; Piotto, M.

doi:10.3390/electronics10161901

Cited by 11 publications

(5 citation statements)

References 42 publications

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“…The proposed OCL-LDO works under the condition of

= 0.6 V,

= 0.5 V, with

= 100 mV. The LDO’s

is ultra-low, which can be generated with a BJT-based Kuijk bandgap reference [ 29 ]. Figure 7 depicts the complete circuit diagram.…”

Section: Circuit Implementationmentioning

confidence: 99%

A 0.6 VIN 100 mV Dropout Capacitor-Less LDO with 220 nA IQ for Energy Harvesting System

Zhang

Zeng

2023

Micromachines

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A fully integrated and high-efficiency low-dropout regulator (LDO) with 100 mV dropout voltage and nA-level quiescent current for energy harvesting has been proposed and simulated in the 180 nm CMOS process in this paper. A bulk modulation without an extra amplifier is proposed, which decreases the threshold voltage, lowering the dropout voltage and supply voltage to 100 mV and 0.6 V, respectively. To ensure stability and realize low current consumption, adaptive power transistors are proposed to enable system tropology to alter between 2-stage and 3-stage. In addition, an adaptive bias with bounds is utilized in an attempt to improve the transient response. Simulation results demonstrate that the quiescent current is as low as 220 nA and the current efficiency reaches 99.958% in the full load condition, load regulation is 0.0059 mV/mA, line regulation is 0.4879 mV/V, and the optimal PSR is −51 dB.

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“…The proposed OCL-LDO works under the condition of

= 0.6 V,

= 0.5 V, with

= 100 mV. The LDO’s

is ultra-low, which can be generated with a BJT-based Kuijk bandgap reference [ 29 ]. Figure 7 depicts the complete circuit diagram.…”

Section: Circuit Implementationmentioning

confidence: 99%

A 0.6 VIN 100 mV Dropout Capacitor-Less LDO with 220 nA IQ for Energy Harvesting System

Zhang

Zeng

2023

Micromachines

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show abstract

“…Although the threshold voltage-based reference can be used at lower supply voltages, it is more susceptible to variations in the CMOS fabrication process than the BJT-based reference [14]. In order to obtain a lower supply voltage, the low-threshold-voltage (LVT) or zero-threshold-voltage (ZVT) MOSFET was introduced [15].…”

Section: Introductionmentioning

confidence: 99%

A 2.25 ppm/°C High-Order Temperature-Segmented Compensation Bandgap Reference

Jia,

Ye,

Xiao

2024

Electronics

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This paper presents a bandgap reference (BGR) with high-order temperature-segmented compensation. The compensation signal is generated using the voltage difference between two bipolar junction transistor (BJT) emitter bases, each of which individually loads a proportional-to-absolute temperature (PTAT) current and a zero-to-absolute temperature (ZTAT) current. The proposed BGR achieves a low-temperature coefficient (TC) over a wide temperature range. Simulations using the 0.18 μm Bipolar-CMOS-DMOS process show a typical TC of 2.25 ppm/°C from −40 °C to 125 °C. With an active area of 0.07986 mm2, it consumes 36 μW power under an operating voltage of 1 V. The integrated output noise from 0.1 Hz to 10 Hz is 81.1 μV.

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“…When voltage reference is used as a signalconditioning circuit supply module, its power consumption is generally required to be at the nanowatt level. A conventional voltage reference generally consists of an Operational Amplifier (Op-Amp) and a Bipolar Junction Transistor (BJT) [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Such designs generally consume large amounts of energy.…”

Section: Introductionmentioning

confidence: 99%

An Energy-Efficient Inverter-Based Voltage Reference Scheme with Wide Output Range Using Correlated Level Shifting Technique

Wei,

Chen,

Wei

et al. 2023

Electronics

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A voltage reference is indispensable in Integrated Circuits. To improve the limited linear output voltage range and energy efficiency of a voltage reference, we innovatively propose a switched-capacitor-based programmable voltage reference scheme employing inverter-based OTAs to reduce the power consumption, simultaneously using a novel Correlated Level Shifting (CLS) technique (without active overhead) to enhance the OTA’s DC gain and integral gain. Experimented with SMIC 180 nm CMOS technology, a scheme-based voltage reference realizes a programable output voltage range from 266 to 995 mV at −30 to 120 °C, and the corresponding temperature coefficient (TC) ranges from 82.4 to 99.5 ppm/°C. The power consumption is 976 nW. Furthermore, comparative experiments and evaluations with other schemes have unequivocally verified the superiority of our proposed scheme, characterized by its high energy efficiency and wide output voltage range. The scheme can be suitably deployed in a multitude of novel edge-data processing systems.

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A Low-Power CMOS Bandgap Voltage Reference for Supply Voltages Down to 0.5 V

Cited by 11 publications

References 42 publications

A 0.6 VIN 100 mV Dropout Capacitor-Less LDO with 220 nA IQ for Energy Harvesting System

A 0.6 VIN 100 mV Dropout Capacitor-Less LDO with 220 nA IQ for Energy Harvesting System

A 2.25 ppm/°C High-Order Temperature-Segmented Compensation Bandgap Reference

An Energy-Efficient Inverter-Based Voltage Reference Scheme with Wide Output Range Using Correlated Level Shifting Technique

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