A low power CMOS magnetic field sensor consisting of a MAGFET and a pulse width modulated readout circuit

Lai, Shuk-Fun; Ng, Wing-Kong; Tam, Wing-Shan; Kok, Chi-Wah; Wong, Hei

doi:10.1109/edssc.2017.8126576

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“…The Magnetic Field Effect Transistors (MagFETs) are specially designed MOSFETs that can sense the external magnetic fields and convert them into corresponding electrical signals [1]. Nowadays, the silicon based MagFETs are widely used as cost-effective and customizable on-chip magnetic sensing solution [2][3]. The main drawback of the silicon MagFETs is their low magnetic sensitivity Sr (< 5 %T -1 ) originated mainly due to the modest electron mobility µe (< 600 cm 2 V -1 sec -1 ) in the inversion channel [4][5].…”

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confidence: 99%

A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT

2022

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Section: Ntroductionmentioning

confidence: 99%

A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT

2022

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High Sensitivity Non-split Drain MAGFET for Wireless Sensor Networks

Nakachai

Poyai

2020

JMM

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The non-split drain MAGFET proposed in this paper is aspossess an ideal, highest sensitivity in the same type of device, current mode for low power, and low voltage that can be embedded within a system for wireless sensor networks application. It is a split-drain MAGFET that is designed to have no gap between drains so that there is no loss from the gap. There are two split contacts in one drain to represent the split drains for current difference that induced from due to magnetic field. The relative sensitivity comparison among all the gaps (3, 2, 1, and 0 μm) with all aspect ratio of width (W)/length (L) (L/W = 1, 0.6, and 0.2) at biased current 0.25 mA shows that the zero gap or the non-split drain MAGFET structure gives the highest sensitivity. The sensitivities of the non-split drain at the aspect ratios L/W = 1, 0.6, and 0.2 in this study are 0.0595, 0.0479, and 0.0231 T−1, respectively. It is proved that the gap is not necessary for the MAGFET. It is a new, smart way to design the MAGFET for the highest sensitivity and gap lossless for modern sensor applications.

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A low power CMOS magnetic field sensor consisting of a MAGFET and a pulse width modulated readout circuit

Cited by 2 publications

References 7 publications

A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT

A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT

High Sensitivity Non-split Drain MAGFET for Wireless Sensor Networks

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